Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures

Wayesh Qarony; Ahmed S. Mayet; Ekaterina Ponizovskaya Devine; Soroush Ghandiparsi; Cesar Bartolo-Perez; Ahasan Ahamed; Amita Rawat; Hasina H. Mamtaz; Toshishige Yamada; Shih-Yuan Wang; M. Saif Islam

doi:doi:10.1117/1.APN.2.5.056001

Advanced Photonics Nexus, 2023, 2 (5): 056001, Published Online: Jul. 26, 2023

Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures Download： 663次

Author Affiliations

¹ University of California, Davis, Department of Electrical and Computer Engineering, Davis, California, United States

² W&WSens Devices, Inc., Los Altos, California, United States

³ University of California, Baskin School of Engineering, Department of Electrical and Computer Engineering, Santa Cruz, California, United States

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi, Cesar Bartolo-Perez, Ahasan Ahamed, Amita Rawat, Hasina H. Mamtaz, Toshishige Yamada, Shih-Yuan Wang, M. Saif Islam. Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures[J]. Advanced Photonics Nexus, 2023, 2(5): 056001.

Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures Download： 663次

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Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures Download： 663次

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