光学学报, 2014, 34 (9): 0905002, 网络出版: 2014-08-15   

极紫外光刻含缺陷多层膜衍射谱仿真简化模型

Simplified Model for Defective Multilayer Diffraction Spectrum Simulation in Extreme Ultraviolet Lithography
作者单位
1 中国科学院上海光学精密机械研究所信息光学与光电技术实验室, 上海 201800
2 中国科学院大学, 北京 100049
引用该论文

刘晓雷, 李思坤, 王向朝. 极紫外光刻含缺陷多层膜衍射谱仿真简化模型[J]. 光学学报, 2014, 34(9): 0905002.

Liu Xiaolei, Li Sikun, Wang Xiangzhao. Simplified Model for Defective Multilayer Diffraction Spectrum Simulation in Extreme Ultraviolet Lithography[J]. Acta Optica Sinica, 2014, 34(9): 0905002.

参考文献

[1] Andreas Erdmann, Peter Evanschitzky, Tristan Bret, et al.. Analysis of EUV mask multilayer defect printing characteristics [C]. SPIE, 2012, 8322: 83220E.

[2] T Hashimoto, H Yamanashi, M Sugawara, et al.. Lithographic characterization of EUVL mask blank defects [C]. SPIE, 2004, 5374: 740-750.

[3] T Pistor, Y Deng, A Neureuther. Extreme ultraviolet mask defect simulation: low-profile defects [J]. J Vac Sci Technol B, 2000, 18(6): 2926-2929.

[4] P Evanschitzky, A Erdmann. Fast near field simulation of optical and EUV masks using the waveguide method [C]. SPIE, 2007, 6533: 65330Y.

[5] C H Clifford, A R Neureuther. Fast simulation of buried EUV mask defect interaction with absorber features [C]. SPIE, 2007, 6517: 65170A.

[6] E M Gullikson, C Cerjan, D G Stearns, et al.. Practical approach for modeling extreme ultraviolet lithography mask defects [J]. J Vac Sci Technol B, 2002, 20(1): 81-86.

[7] C Sambale, T Schmoeller, A Erdmann, et al.. Rigorous simulation of defective EUV multilayer masks [C]. SPIE, 2003, 5256: 1239-1248.

[8] M C Lam, A R Neureuther. Fast simulation methods for defective EUV mask blank inspection [C].SPIE, 2004, 5567: 741-750.

[9] C H Clifford, A R Neureuther. Smoothing based model for images of isolated buried EUV multilayer defects [C]. SPIE, 2008, 6921: 692119.

[10] D G Stearns, P B Mirkarimi, E Spiller. Localized defects in multilayer coatings [J]. Thin Solid Films, 2004, 446(1): 37-49.

[11] P Naulleau, K A Goldberg, E H Anderson, et al.. Lithographic characterization of the printability of programmed extreme ultraviolet substrate defects [J]. J Vac Sci Technol B, 2003, 21(4): 1286-1290.

[12] 曹宇婷, 王向朝, 邱自成, 等. 极紫外投影光刻掩模衍射简化模型的研究[J]. 光学学报, 2011, 31(4): 0405001.

    Cao Yuting, Wang Xiangzhao, Qiu Zicheng, et al.. Simplified model for mask diffraction in extreme-ultraviolet projection lithography [J]. Acta Optica Sinica, 2011, 31(4): 0405001.

[13] Yuting Cao, Xiangzhao Wang, Andreas Erdmann, et al.. Analytical model for EUV mask diffraction field calculation [C]. SPIE, 2011, 8171: 81710N.

[14] 曹宇婷, 王向朝, 步扬, 等. 极紫外投影光刻掩模阴影效应分析[J]. 光学学报, 2012, 32(8): 0805001.

    Cao Yuting, Wang Xiangzhao, Bu Yang, et al.. Analysis of mask shadowing effects in extreme-ultraviolet lithography [J]. Acta Optica Sinica, 2012, 32(8): 0805001.

刘晓雷, 李思坤, 王向朝. 极紫外光刻含缺陷多层膜衍射谱仿真简化模型[J]. 光学学报, 2014, 34(9): 0905002. Liu Xiaolei, Li Sikun, Wang Xiangzhao. Simplified Model for Defective Multilayer Diffraction Spectrum Simulation in Extreme Ultraviolet Lithography[J]. Acta Optica Sinica, 2014, 34(9): 0905002.

本文已被 8 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!