基于相同点位分别测试了TFT白点色度均匀性(WCU)和各层氮化硅(SiNx)膜厚, 并分析了二者的关联性, 发现TFT WCU与栅极绝缘层(GI)和第二绝缘层(PVX2)两层的相关性较大, 而与厚度最薄, 折射率最大的第一绝缘层(PVX1)最不相关; 提出了降低GI层剩余厚度避免低速沉积GI(GL)的残留和降低PVX2膜层厚度以提升面内均一性的改善方案, 最终使得产品的TFT WCU均值降低约0.000 7; 最大值由改善前的0.007 0降至改善后的0.005 2, 满足了最大值≤0.005 5的目标值, 改善效果明显。

TFT White Color Uniformity (WCU) and SiNx film thickness of each layer were tested based on the same test points and the correlation between them is analyzed. It is found that TFT WCU has a great correlation with GI and PVX2 layers rather than PVX1 layer with the thinnest THK and largest n value. On this basis, an improvement scheme to reduce the center value of GI Remain THK(to avoid the residue of GL layer) and PVX2 THK (to improve the uniformity in panel)at the same time is proposed, which can reduces the mean value of TFT WCU by about 0.000 7. After improvement, the maximum value can be decreased from 0.007 0 to 0.005 2 to satisfy the specification(maximum value ≤ 0.005 5). The effect of improvement is obvious.