InAs/InGaAs数字合金应变补偿量子阱激光器
[1] Mattiello M, Niklès M, Schilt S, et al. Novel Helmholtz-based photoacoustic sensor for trace gas detection at ppm level using GaInAsSb/GaAlAsSb DFB lasers［J］. Spectrochimica Acta Part A, 2006,63: 952958.
[2] Jean B, Bende T. Mid-IR laser applications in medicine［J］. Topics In Applied Physics, 2003,89: 511544.
[3] Kim J G, Shterengas L, Martinelli R U, et al. Room-temperature 2.5μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves［J］. Applied Physics Letters, 2002,81(17): 31463148.
[4] Zhang Y G, Zheng Y L, Lin C, et al. Continuous wave performance and tenability of MBE grown 2.1μm InGaAsSb/AlGaAsSb MQW lasers［J］. Chinese Physics Letters, 2006,23(8): 22622265.
[5] O’Brien K, Sweeney S J, Adams A R, et al. Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm［J］. Applied Physics Letters, 2006,89(5): 051104.
[6] Forouhar S, Ksebdzov A, Larsson A, et al. InGaAs/lnGaAsP/lnP Strained-layer quantum well lasers at 2μm［J］. Electronics Letters, 1992,28(15): 14311432.
[7] Mitsuhara M, Ogasawara M, Oishi M, et al. Metalorganic molecular-beam-epitaxy-grown In0.77Ga0.23As/InGaAs multiple quantum well lasers emitting at 2.07μm wavelength［J］. Applied Physics Letters, 1998,72(24): 31063108.
[8] Serries D, Peter M, Kiefer R, et al. Improved Performance of 2-μm GaInAs Strained Quantum-Well Lasers on InP by Increasing Carrier Confinement［J］. IEEE Photonics Technology Letters, 2001,13(5): 412414.
[9] Sato T, Mitsuhara M, Watanabe T, et al. Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1μm by metalorganic vapor phase epitaxy［J］. Applied Physics Letters, 2005,87(21): 211903.
[10] Zheng L, Lin C H, Singer K E, et al. Strained GaInAs quantum well mid-IR emitters［J］. IEE Proc.- Optoelectron, 1997,144(5): 360364.
[11] Sato T, Mitsuhara M, Nunoya N, et al. 2.33-μm-Wavelength Distributed Feedback Lasers With InAs-In0.53Ga0.47As Multiple-Quantum Wells on InP Substrates［J］. IEEE Photonics Technology Letters, 2008,20(12): 10451047.
[12] Gu Y, Zhang Y G, Liu S, et al. Strain Compensated AlInGaAs/InGaAs/InAs Triangular Quantum Wells for Lasing Wavelength beyond 2μm［J］. Chinese Physics Letters, 2007,24 (11): 32373240.
[13] Mourad C, Gianardi D, Malloy K J, et al. 2μm GaInAsSb/AlGaAsSb midinfrared laser grown digitally on GaSb by modulated-molecular beam epitaxy［J］. Journal of Appiled Physics, 2000,88(10): 55435546.
[14] Gu Y, Zhang Y G, Wang K, et al. AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.12.4μm range［J］. Journal of Crystal Growth, 2009,311:19351938.
[15] Klopf F, Deubert S, Reithmaier J P, et al. Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers［J］. Applied Physics Letters, 2002,81(2): 217219.
[16] Ochiai M, Temkin H, Forouhar S, et al. InGaAs-InGaAsP Buried Heterostructure Lasers Operating at 2.0μm［J］. IEEE Photonics Technology Letters, 1995,7(8): 825827.
[17] Dong J, Ubukata A， Matsumoto K. Characteristics Dependence on Confinement Structure and Single-Mode Operation in 2-μm Compressively Strained InGaAs-InGaAsP Quantum-Well Lasers［J］. IEEE Photonics Technology Letters, 1998,10(4): 513515.
[18] Mitsuhara M, Ogasawara M, Oishi M, et al. 2.05-μm Wavelength InGaAs-InGaAs Distributed-Feedback Multiquantum-Well Lasers with 10-mW Output Power［J］. IEEE Photonics Technology Letters, 1999,11(1): 3335.
曹远迎, 顾溢, 张永刚, 李耀耀, 方祥, 李爱珍, 周立, 李好斯白音. InAs/InGaAs数字合金应变补偿量子阱激光器[J]. 红外与毫米波学报, 2014, 33(3): 213. CAO Yuan-Ying, GU Yi, ZHANG Yong-Gang, LI Yao-Yao, FANG Xiang, LI Ai-Zhen, ZHOU Li, LI Hao-Si-Bai-Yin. InAs/InGaAs digital alloy strain-compensated quantum well lasers[J]. Journal of Infrared and Millimeter Waves, 2014, 33(3): 213.
PDF全文
