蓝宝石衬底多层AlGaN薄膜透射谱研究 
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Transmission Spectrum of Multilayer AlGaN Thin Film on Sapphire Substrate
1 中国科学院上海技术物理研究所红外成像材料与器件重点实验室, 上海 200083
2 中国科学院大学, 北京 100049
图 & 表
图 1. 蓝宝石与#840、#844、#848样品的光学测试结果。(a) 60°入射角下蓝宝石的测试结果;(b) #840、#844、#848样品和蓝宝石的透射谱
Fig. 1. Optical measurement results of #840, #844, #848 samples and sapphire. (a) Measurement results of sapphire under incident angle of 60°; (b) transmission spectra of #840、#844、#848 samples and sapphire
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图 2. 蓝宝石的光学参数拟合结果。(a)蓝宝石的复折射率和消光系数;(b)不同条件下的蓝宝石透射谱
Fig. 2. Optical parameter fitting results of sapphire. (a) Complex refractive index and extinction coefficient of sapphire; (b) transmission spectra under different conditions
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图 3. 全组分AlGaN的折射率随光子能量的变化。(a)所提折射率模型(线)与文献[
19]的结果(点)对比;(b)全组分范围内的简单验证
Fig. 3. Refractive index of full composition AlGaN. (a) Result comparison of proposed refractive index model (line) and that in Ref. [19] (dot); (b) simple verification in full composition range
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图 4. AlGaN吸收系数随光子能量的变化
Fig. 4. Absorption coefficient of AlGaN versus photon energy
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图 5. 全组分AlGaN的吸收系数随光子能量的变化。(a)修正后的吸收系数模型(线)与文献[
19]的结果(点)对比;(b)全组分范围内的简单验证
Fig. 5. Absorption coefficient of full composition AlGaN versus photon energy. (a) Result comparison of corrected absorption coefficient model (line) and that in Ref. [19] (dot); (b) simple verification in full composition range
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图 6. 不同AlGaN的透射谱。(a)不同厚度;(b)不同Al组分
Fig. 6. Transmission spectra of different AlGaN. (a) Different thicknesses; (b) different compositions
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图 7. 结构A、B、C的透射谱
Fig. 7. Transmission spectra of structures A, B and C
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图 8. #840的透射谱
Fig. 8. Transmission spectra of #840
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图 9. #844的透射谱
Fig. 9. Transmission spectra of #844
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图 10. #848的透射谱
Fig. 10. Transmission spectra of #848
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表 1#840的设计结构
Table1. Designed structure of # 840
| Layer No. | Material | Doping type | Thickness /μm | Al component |
|---|
| 1 | GaN | p | 0.20 | 0 | | 2 | GaN | i | 0.20 | 0 | | 3 | AlxGa1-xN | i | 0.05 | [0,0.55] | | 4 | Al0.55Ga0.45N | n | 1.00 | 0.55 | | 5 | Al0.55Ga0.45N | i | 1.00 | 0.55 |
|
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表 11 拟合结构844-1的参数
Table1. 1 Parameters of fitting structure 844-1
| Layer No. | Material | Thickness /μm | Atomic fractionof Al |
|---|
| 1 | GaN | 0.15 | 0.021 | | 2 | AlGaN | 0.04 | 0.230 | | 3 | AlGaN | 0.37 | 0.420 | | 4 | AlGaN | 0.05 | 0.490 | | 5 | AlGaN | 2.48 | 0.550 | | 6 | AlGaN | 0.05 | 0.650 | | 7 | AlGaN | 0.05 | 0.780 | | 8 | AlN | 1.14 | 1.000 |
|
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表 10 拟合结构840-3和840-4的参数
Table1. 0 Parameters of fitting structures 840-3 and 840-4
| Layer No. | Material | Thickness /μm | Atomic fractionof Al |
|---|
| 1 | GaN | 0.36 | 0.035 | | 2 | AlGaN | 0.02 | 0.330 | | 3 | AlGaN | 0.04 | 0.400 | | 4 | AlGaN | 2.00 | 0.550 | | 5 | AlGaN | 0.04 | 0.650 | | 6 | AlGaN | 0.02 | 0.790 | | 7 | AlN | 1.68 | 1.000 |
|
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表 12 拟合结构848-1的参数
Table1. 2 Parameters of fitting structure 848-1
| Layer No. | Material | Thickness /μm | Atomic fractionof Al |
|---|
| 1 | GaN | 0.27 | 0.02 | | 2 | AlGaN | 0.05 | 0.17 | | 3 | AlGaN | 0.05 | 0.28 | | 4 | ZlGaN | 0.39 | 0.47 | | 5 | AlGaN | 0.02 | 0.53 | | 6 | AlGaN | 2.37 | 0.60 | | 7 | AlGaN | 0.05 | 0.66 | | 8 | AlGaN | 0.05 | 0.78 | | 9 | AlN | 0.50 | 1.00 |
|
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表 2#844的设计结构
Table2. Designed structure of # 844
| Layer No. | Material | Doping type | Thickness /μm | Al component |
|---|
| 1 | GaN | p | 0.20 | 0 | | 2 | Al0.2Ga0.8N | p | 0.04 | 0.20 | | 3 | Al0.42Ga0.58N | i | 0.14 | 0.42 | | 4 | Al0.42Ga0.58N | n | 0.06 | 0.42 | | 5 | Al0.42Ga0.58N | i | 0.18 | 0.42 | | 6 | AlxGa1-xN | n | 0.05 | [0.42,0.55] | | 7 | Al0.55Ga0.45N | n | 2.00 | 0.55 | | 8 | Al0.55Ga0.45N | i | 0.50 | 0.55 |
|
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表 3#848的设计结构
Table3. Designed structure of # 848
| Layer No. | Material | Doping type | Thickness /μm | Al component |
|---|
| 1 | GaN | p | 0.30 | 0 | | 2 | AlxGa1-xN | p | 0.05 | [0,0.42] | | 3 | Al0.42Ga0.58N | i | 0.14 | 0.42 | | 4 | Al0.42Ga0.58N | n | 0.06 | 0.42 | | 5 | Al0.42Ga0.58N | i | 0.18 | 0.42 | | 6 | AlxGa1-xN | n | 0.05 | [0.42,0.55] | | 7 | Al0.55Ga0.45N | n | 2.50 | 0.55 | | 8 | Al0.55Ga0.45N | i | 1.00 | 0.55 |
|
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表 4#840、#844、#848的半峰全宽
Table4. FWHMs of #840、#844 and#848
| Sample No. | FWHM /(″) |
|---|
| (002) | (102) |
|---|
| #840 | 397 | 902 | | #844 | 434 | 597 | | #848 | 462 | 649 |
|
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表 5结构A的参数
Table5. Parameters of structure A
| Layer No. | Material | Thickness /μm | Atomic fractionof Al |
|---|
| 1 | AlGaN | 0.6 | 0.6 |
|
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表 6结构B的参数
Table6. Parameters of structure B
| Layer No. | Material | Thickness /μm | Atomic fractionof Al |
|---|
| 1 | AlGaN | 0.03 | 0.3 | | 2 | AlGaN | 0.57 | 0.6 |
|
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表 7结构C的参数
Table7. Parameters of structure C
| Layer No. | Material | Thickness /μm | Atomic fractionof Al |
|---|
| 1 | AlGaN | 0.01 | 0.1 | | 2 | AlGaN | 0.01 | 0.3 | | 3 | AlGaN | 0.01 | 0.5 | | 4 | AlGaN | 0.57 | 0.6 |
|
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表 8拟合结构840-1的参数
Table8. Parameters of fitting structure 840-1
| Layer No. | Material | Thickness /μm | Atomic fractionof Al |
|---|
| 1 | GaN | 0.36 | 0.035 |
|
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表 9拟合结构840-2的参数
Table9. Parameters of fitting structure 840-2
| Layer No. | Material | Thickness /μm | Atomic fractionof Al |
|---|
| 1 | GaN | 0.36 | 0.035 | | 2 | AlGaN | 2.12 | 0.550 | | 3 | AlN | 1.68 | 1.000 |
|
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李浩杰, 张燕. 蓝宝石衬底多层AlGaN薄膜透射谱研究[J]. 光学学报, 2020, 40(19): 1931002. Haojie Li, Yan Zhang. Transmission Spectrum of Multilayer AlGaN Thin Film on Sapphire Substrate[J]. Acta Optica Sinica, 2020, 40(19): 1931002.
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