发光学报, 2016, 37 (4): 457, 网络出版: 2016-06-06
退火温度对非晶铟钨氧薄膜晶体管特性的影响
Effect of Annealing Temperature on Performance of Amorphous InWO Thin Film Transistors
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许玲, 吴崎, 董承远. 退火温度对非晶铟钨氧薄膜晶体管特性的影响[J]. 发光学报, 2016, 37(4): 457. XU Ling, WU Qi, DONG Cheng-yuan. Effect of Annealing Temperature on Performance of Amorphous InWO Thin Film Transistors[J]. Chinese Journal of Luminescence, 2016, 37(4): 457.
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