中国激光, 1995, 22 (1): 45, 网络出版: 2007-08-17
410～373nm激光作用下四甲基硅的多光子电离与解离
Multiphoton Ionization and Dissociation of Tetramethylsilane at 410～373 nm Laser Radiation
四甲基硅 多光子过程 A类化学行为 B类光化学行为 质谱峰宽 tetramethylsilane multiphoton ionization class A photochemical process class B photochemical process mass spectra pekwidth
摘要
利用平行板电极装置测定了四甲基硅于某些波长点处的激光光强指数,讨论了多光子电离(mPI)谱中某些话线的归属。通过对飞行时间(TOF)质谱峰宽的分析并结合质谱实验结果,讨论了该分子可能的mPI过程,得到了较高能量下SI+的产生仍以中性碎片的解离──硅原子的电离为主,而SI＝(N＝1～3)的形成则以中性碎片的自电离为主的结论。
Abstract
In this peper, the laser power dependence measurement of Si(CH3)4 with parallel plate ionization cell at some wavelengths was reported and the assignment of some transitions in multiphoton ionization(MPI) spectra was discussed. By analysing the pekwidths of time-of-flight (TOF) mass spectra and other experimental results, the possible MPI process of Si(CH3)4 has been studied. It concluded that Si+ mainly came from silicon ionization after neutral molecular fragmentation at higher energy laser radiation, whereas Si(CH3)+n (n=1~3) mainly came from auto-ionization of neutral molecular fragments.
施德恒, 陆庆正, 孔繁敖, 余枝广, 马兴孝. 410～373nm激光作用下四甲基硅的多光子电离与解离[J]. 中国激光, 1995, 22(1): 45. 施德恒, 陆庆正, 孔繁敖, 余枝广, 马兴孝. Multiphoton Ionization and Dissociation of Tetramethylsilane at 410～373 nm Laser Radiation[J]. Chinese Journal of Lasers, 1995, 22(1): 45.
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