透射式碲铯(Cs<SUB>2</SUB>Te)光阴极厚度不均匀现象消除方法的研究

程宏昌; 石峰; 冯刘; 刘晖; 史鹏飞

应用光学, 2008, 29 (4): 0557, 网络出版: 2010-06-03

透射式碲铯(Cs₂Te)光阴极厚度不均匀现象消除方法的研究

Method for eliminating thickness non-uniformity of transmission Cs₂Te photocathode

论文大纲

程宏昌 ^1,2,*石峰 ^1,2冯刘 ^1,2刘晖 ^1,2史鹏飞 ^1,2

作者单位

¹ 微光夜视技术国防科技重点实验室，陕西西安 710065

² 西安应用光学研究所陕西西安 710065

Cs₂Te光阴极厚度均匀性蒸发源阴极基底 Cs₂Te photocathode thickness uniformity vaporizing source photocathode substrate

摘要

为解决透射式Cs₂Te光阴极厚度不均匀问题，通过理论和实验研究，分析了产生此问题的机理及其影响因素。这些因素包括：蒸发源发生器形状及其与阴极基底之间的相对位置；Cs／Te原子在阴极基底表面上完成化学反应所需的结合能以及制作阴极前基底表面所能达到的温度均匀性水平等。实验证明，上述最后一个因素是影响Cs₂Te光阴极厚度不均匀的主要原因。通过改变加温程序，优化保温时间，均衡阴极基底与阴极托盘温度梯度等途径，使得制作的透射式Cs₂Te光阴极厚度不均匀性由原来的76．4%，改善为＜10%。

Abstract

To solve the problem of thickness non-uniformity of the transmission mode Cs₂Te photocathode,the mechanism producing the problem and the influencing factors were analyzed on the basis of theoretical and experimental research. The factors that influence the thickness non-uniformity include the shape of the evaporator,the relative position of the evaporator with the photocathode substrate,the binding energy needed by the Cs/Te atom to complete the mechanical reaction on the photocathode substrate and the temperature uniformity level of the substrate surface before the fabrication of the photocathode. The experiment proves that the last factor has the most important effect on the thickness non-uniformity of the transmission mode Cs₂Te photocathode. By changing the heating program,optimizing the warm preservation time and balancing the temperature gradient of the photocathode substrate and pallet,the thickness non-uniformity of the transmission Cs₂Te photocathode was improved from 76.4% to less than 10%.

参考文献

[1] 石峰，程宏昌，贺英萍．紫外指纹识别照相系统视场中心亮斑的产生原因及分析[J]．应用光学，2007，28(1)：20-23．

SHI Feng,CHENG Hong-chang,HE Ying-ping. The method for eliminating bright spot in the field of view center in UV fingerprint identification camera system [J]. Journal of Applied Optics,2007,28(1):20-23. (in Chinese)

[2] DI B A,SABARY F.VALERI S,et al. Formation of the Cs₂Te photocathode: auger and photoemission spectroscopy study [EB/OL]. http://epaper.kek.jp/e96/papers/THPL/THPo12L.PDF.

[3] 申屠浩，徐汉成，顾肇业．紫外像增强器管的研究[J].光电子技术，1999，19(2)：83-88．

SHEN Tu-hao,XU Han-cheng,GU Zhao-ye. Study on ultraviolet image intensifier tube [J]. Optoelectronic Technology,1999,19(2):83-88. (in Chinese)

[4] DI B A,SABARY F. Auger and x-ray photoemission spectroscopy study on Cs₂Te photocathodes [J]. J Appl. Phys.,1996,80(5) :3024-3030.

[5] 萨默A H．光电发射材料[M]．候洵，译．北京：科学出版社，1985．

萨默 A H. Photoelectrical emission material [M]. Translated by HOU Xun. Beijing: Science Press,1985. (in Chinese)

[6] 钟生东，张学恒，闫吉庆，等．碲铯紫外光电阴极的工艺研究[J]．光学技术，2000，26(4)：318-321．

ZHONG Sheng-dong,ZHANG Xue-heng,YAN Jinqing,et al. Study on processing of Te-Cs ultraviolet cathode [J]. Optical Technique,2000,26(4) : 318-321. (in Chinese)

[7] 唐伟忠．薄膜材料制备原理、技术及应用[M]．北京：冶金工业出版社，1998．

TANG Wei-zhong. Film material preparation theory,technology and application [M]. Beijing:Metallurgic Industry Press,1998. (in Chinese)

程宏昌, 石峰, 冯刘, 刘晖, 史鹏飞. 透射式碲铯(Cs₂Te)光阴极厚度不均匀现象消除方法的研究[J]. 应用光学, 2008, 29(4): 0557. CHENG Hong-chang, SHI Feng, FENG Liu, LIU Hui, SHI Peng-fei. Method for eliminating thickness non-uniformity of transmission Cs₂Te photocathode[J]. Journal of Applied Optics, 2008, 29(4): 0557.

透射式碲铯(Cs₂Te)光阴极厚度不均匀现象消除方法的研究

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