[1] 顾勇, 王莎鸥, 赵建明, 等.高密度3-D封装技术的应用与发展趋势[J]. 电子元件与材料, 2010, 29(7): 67-70.

[2] 吴向东.三维集成封装中的TSV互连工艺研究进展[J]. 电子与封装, 2012(9): 1-5, 13.

[3] Tang Y, Chang Y, Chen K. Wafer-level Cu-Cu bonding technology[J]. Microelectron. Reliability, 2012, 52(2): 312-320.

[4] Tadepalli R, Thompson C V. Formation of Cu-Cu interfaces with ideal adhesive strengths via room temperature pressure bonding in ultrahigh vacuum[J]. Appl. Phys. Lett., 2007, 90(15): 151919.

[5] Hofmann L, Ecke R, Schulz S E, et al. Investigations regarding Through Silicon Via filling for 3D integration by periodic pulse reverse plating with and without additives[J]. Microelectron. Engin., 2011, 88(5): 705-708.

[6] Lai M, Li S, Shih J, et al. Wafer-level three-dimensional integrated circuits (3D IC): schemes and key technologies[J]. Microelectron. Engin., 2011, 88(11): 3282-3286.

[7] Chen K N, Fan A, Tan C S, et al. Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology[J]. IEEE Electron. Device Lett., 2004, 25(1): 10-12.

[8] Watanabe N.Room-temperature Cu-Cu bonding in ambient air achieved by using cone bump[J]. Appl. Phys. Exp., 2011, 4(1): 6501.

[9] Ko C, Hsiao Z, Fu H, et al. Wafer-to-wafer hybrid bonding technology for 3D IC[C]// IEEE Electronic System-Integration Technol. Conf., 2010: 1-5.

[10] Kim T H, Howlader M, Itoh T, et al. Room temperature Cu-Cu direct bonding using surface activated bonding method[J]. J. of Vacuum Science & Technol. A: Vacuum, Surfaces, and Films, 2003, 21(2): 449-453.

[11] Suga T.Cu-Cu room temperature bonding-current status of surface activated bonding (SAB)[J]. ECS Trans., 2006, 3(6): 155-163.

[12] Shigetou A.Modified diffusion bonding of chemical mechanical polishing Cu at 150℃ at ambient pressure[J]. Appl. Phys. Exp., 2009, 2(5): 6501.

[13] Tan C S, Chen K, Fan A, et al. Silicon layer stacking enabled by wafer bonding[C]// MRS Proc., 2006, 970: Y04-01.

[14] Jang E, Hyun S, Lee H, et al. Effect of wet pretreatment on interfacial adhesion energy of Cu-Cu thermocompression bond for 3D IC packages[J]. J. of Electron. Mater., 2009, 38(12): 2449-2454.

[15] Tan C S, Lim D F, Singh S G, et al. Cu-Cu diffusion bonding enhancement at low temperature by surface passivation using self-assembled monolayer of alkane-thiol[J]. Appl. Phys. Lett., 2009, 95(19): 192108.

[16] Dilimon V S, Fonder G, Delhalle J, et al. Self-assembled monolayer formation on copper: a real time electrochemical impedance study[J]. J. of Phys. Chem. C, 2011, 115(37): 18202-18207.

[17] Tan C S, Lim D F, Ang X F, et al. Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement[J]. Microelectron. Reliability, 2012: 52, 321-324.

[18] Lim D F, Goulet S K, Bergkvist M, et al. Enhancing Cu-Cu diffusion bonding at low temperature via application of self-assembled monolayer passivation[J]. J. of The Electrochem. Society, 2011, 158(10): H1057-H1061.