温度和材料参数对InAsxSb1-x俄歇复合寿命影响的数值分析
张景波, 张云琦, 王思文, 孙晓冰, 邢春香, 刘强, 殷景志. 温度和材料参数对InAsxSb1-x俄歇复合寿命影响的数值分析[J]. 半导体光电, 2020, 41(1): 80.
ZHANG Jingbo, ZHANG Yunqi, WANG Siwen, SUN Xiaobing, XING Chunxiang, LIU Qiang, YIN Jingzhi. Studying Influence of Temperature and Material Parameters on InAsxSb1-x Auger Recombination Life by Numerical Analysis[J]. Semiconductor Optoelectronics, 2020, 41(1): 80.
[1] Schlessinger M. Infrared Technology Fundamentals[M]. New York: Marcel Dekker, Inc., 1995.
[2] 高玉竹, 龚秀英, 李继军, 等. 非制冷型InAsSb光探测器在8~9μｍ波长的性能提高[J]. 光电子·激光, 2015, 26(5): 825-828.
Gao Yuzhu, Gong Xiuying, Li Jijun, et al. Performance enhancement of uncooled InAsSb photodetectors at wavelength of 8~9μm[J]. J. of Optoelectronics·Laser, 2015, 26(5): 825-828.
[3] 孙常鸿, 胡淑红, 王奇伟, 等. 非致冷InAsSb中长波红外探测器研究评述[J]. 中国电子科学研究院学报, 2010, 5(1): 11-18.
Sun Changhong, Hu Shuhong, Wang Qiwei, et al. The research on uncooled InAsSb MWIR and LWIR detectors[J]. J. of China Academy of Electronics and Information Technol., 2010, 5(1): 11-18.
[4] Kopytko M, Martyniuk P, Madejczyk P, et al. High frequency response of LWIR HgCdTe photodiodes operated under zero-bias mode[J]. Optical and Quantum Electron., 2018, 50(2): 64.
[5] 郭 轶, 吴广会, 冯彦斌. 光导型InAsSb红外探测器的研制[J]. 电子设计工程, 2012, 20(18): 93-95.
Guo Yi, Wu Guanghui, Feng Yanbin. Fabrication of photoconductors InAsSb infrared detector[J]. Electronic Design Engin., 2012, 20(18): 93-95.
[6] Rogalski A. InAs1-xSbx infrared detectors[J]. Prog. Quant. Electr., 1989, 13(3): 191-231.
[7] Razeghi M. Overview of antimonide based Ⅲ-Ⅴ semiconductor epitaxial layers and their applications at the center for quantum devices[J]. Eur. Phys. J. of Appl. Phys., 2003, 23(3): 149-205.
[8] Suo F, Tong J C, Qian L, et al. Study of dark current in mid-infrared InAsSb-based hetero n-i-p photodiode[J]. J. of Physics D: Appl. Phys., 2018, 51: 275102.
[9] 高玉竹, 赵子瑞, 龚秀英. 近室温工作的中长波InAsSb探测器[J]. 光电子·激光, 2018, 29(12): 1266-1269.
Gao Yuzhu, Zhao Zirui, Gong Xiuying. InAsSb photodetectors with long wavelength operating at near room temperature[J]. J. of Optoelectronics·Laser, 2018, 29(12): 1266-1269.
[10] 邓功荣, 赵 鹏, 袁 俊, 等. 锑基高工作温度红外探测器研究进展[J]. 红外技术, 2017, 39(9): 780-784.
[11] Wieder H H, Clawson A R. Photo-electronic properties of InAs0.07Sb0.93 films[J]. Thin Solid Films, 1973, 15(2): 217-221.
[12] Bethea C G, Levine B F, Yen M Y. Photoconductance measurements on InAs0.22Sb0.78/GaAs grown using molecular beam epitaxy[J]. Appl. Phys. Lett., 1988, 53(4): 291-292.
[13] Rogalski A, Jozwikowski K. Intrinsic carrier concentration and effective masses in InAs1-xSbx[J]. Infrared Phys., 1989, 29(1): 35-42.
[14] Beattie A. Quantum efficiency in InSb[J]. J. Phys. Chem. Solids., 1962, 23(8): 1049-1056.
张景波, 张云琦, 王思文, 孙晓冰, 邢春香, 刘强, 殷景志. 温度和材料参数对InAsxSb1-x俄歇复合寿命影响的数值分析[J]. 半导体光电, 2020, 41(1): 80. ZHANG Jingbo, ZHANG Yunqi, WANG Siwen, SUN Xiaobing, XING Chunxiang, LIU Qiang, YIN Jingzhi. Studying Influence of Temperature and Material Parameters on InAsxSb1-x Auger Recombination Life by Numerical Analysis[J]. Semiconductor Optoelectronics, 2020, 41(1): 80.
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