808 nm准连续600 W高功率半导体激光芯片研制 下载: 737次
王贞福, 李特, 杨国文, 宋云菲. 808 nm准连续600 W高功率半导体激光芯片研制[J]. 中国激光, 2017, 44(6): 0601004.
Wang Zhenfu, Li Te, Yang Guowen, Song Yunfei. Development of 808 nm Quasi-Continuous Wave Laser Diode Bar with 600 W Output Power[J]. Chinese Journal of Lasers, 2017, 44(6): 0601004.
[1] 刘梦涵, 崔碧峰, 何 新, 等. 大功率低阈值半导体激光器研究[J]. 中国激光, 2016, 43(5): 0502001.
[2] 姜梦华, 徐 丹, 黄雪松, 等. 高效率400 μm光纤耦合千瓦半导体激光器[J]. 中国激光, 2015, 42(s1): s102005.
Jiang Menghua, Xu Dan, Huang Xuesong, et al. High efficiency 400 μm fiber coupled diode laser with kilowatt output power[J]. Chinese J Lasers, 2015, 42(s1): s102005.
[3] 许成文, 钟理京, 秦应雄, 等. 激光表面改性3 kW半导体激光器矩形光斑聚焦系统研究[J]. 中国激光, 2016, 43(1): 0102001.
[4] Crump P, Frevert C, Bugge F, et al. Progress in high-energy-class diode laser pump sources[C], SPIE, 2015, 9348: 93480U.
[5] Frevert C, Bugge F, Knigge S, et al. 940 nm QCW diode laser bars with 70% efficiency at 1 kW output power at 203 K: analysis of remaining limits and path to higher efficiency and power at 200 K and 300 K[C]. SPIE, 2016, 9733: 97330L.
[6] Morales J, Lehkonen S, Liu G, et al. Advances in 808 nm high power diode laser bars and single emitters[C]. SPIE, 2016, 9733: 97330T.
[7] Huang H, Wang J, DeVito M, et al. High power high brightness 808 nm QCW laser diode mini bars[C]. SPIE, 2010, 7583: 75831A.
[8] Bacchin G, Fily A, Qiu B, et al. High temperature and high peak-power 808 nm QCW bars and stacks[C]. SPIE, 2010, 7583: 75830P.
[9] Hülsewede R, Schulze H, Sebastian J, et al. High reliable-high power AlGaAs/GaAs 808 nm diode laser bars[C]. SPIE, 2007, 6456: 645607.
[10] Liu S P, Zhong L, Zhang H Y, et al. 259 W QCW Al-free 808 nm linear laser diode arrays[J]. Journal of Semiconductors, 2008, 29(12): 2335-2339.
[11] 李再金, 胡黎明, 王 烨, 等. 808 nm高占空比大功率半导体激光器阵列[J]. 强激光与粒子束, 2009, 21(11): 1615-1618.
[12] 陈宏泰, 车相辉, 林 琳, 等. 808 nm 高效率激光二极管[J]. 微纳电子技术, 2011, 48(7): 418-421.
Chen Hongtai, Che Xianghui, Lin Lin, et al. 808 nm high efficiency laser diodes[J]. Micronanoelectronic Technology, 2011, 48(7): 418-421.
[13] 高 欣, 薄报学, 曲 轶, 等. 808 nm准连续阵列半导体激光器[J]. 发光学报, 1999, 20(4): 342-345.
Gao Xin, Bo Baoxue, Qu Yi, et al. 808 nm QCW semiconductor lasers arrays[J]. Chinese Journal of Luminescence, 1999, 20(4): 342-345.
[14] 王贞福, 杨国文, 吴建耀, 等. 高功率、高效率808 nm半导体激光器阵列[J]. 物理学报, 2016, 65(16): 164203.
Wang Zhenfu, Yang Guowen, Wu Jianyao, et al. High-power, high-efficiency 808 nm laser diode array[J]. Acta Physica Sinica, 2016, 65(16): 164203.
[15] Tomm J W, Ziegler M, Hempel M, et al. Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers[J]. Laser & Photonics Reviews, 2011, 5(3): 422-441.
王贞福, 李特, 杨国文, 宋云菲. 808 nm准连续600 W高功率半导体激光芯片研制[J]. 中国激光, 2017, 44(6): 0601004. Wang Zhenfu, Li Te, Yang Guowen, Song Yunfei. Development of 808 nm Quasi-Continuous Wave Laser Diode Bar with 600 W Output Power[J]. Chinese Journal of Lasers, 2017, 44(6): 0601004.