808 nm准连续600 W高功率半导体激光芯片研制

王贞福; 李特; 杨国文; 宋云菲

doi:doi:10.3788/cjl201744.0601004

中国激光, 2017, 44 (6): 0601004, 网络出版: 2017-06-08

808 nm准连续600 W高功率半导体激光芯片研制下载： 737次

Development of 808 nm Quasi-Continuous Wave Laser Diode Bar with 600 W Output Power

论文大纲

王贞福 ^1,*李特 ¹杨国文 ^1,2宋云菲 ¹

作者单位

¹ 中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室, 陕西西安 710119

² 西安立芯光电科技有限公司, 陕西西安 710077

激光光学半导体激光芯片峰值功率光损耗寿命 laser optics laser diode wafer peak power optical loss lifetime

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摘要

通过设计极低损耗808 nm半导体激光芯片外延结构, 实现腔内损耗小于0.5 cm-1。采用该高效率外延结构研制出高峰值功率808 nm巴条芯片, 巴条的填充因子为85%, 包含60个发光点, 发光区宽度为140 μm, 腔长为2 mm。在驱动电流为500 A, 脉冲宽度为200 μs, 重复频率为400 Hz, 占空比为8%的工作条件下, 该芯片的准连续(QCW)峰值输出功率为613 W, 斜率效率达1.34 W/A,峰值波长为807.46 nm, 光谱半峰全宽为2.88 nm。任意选取5只芯片, 在准连续300 W(占空比8%)条件下进行了寿命验证, 芯片寿命达到3.63×109 shot, 定功率300 W下电流变化小于10%, 达到商业化水平。

Abstract

Design of 808 nm epitaxial layer structure is demonstrated, and a very low internal loss less than 0.5 cm-1 is achieved. The quasi-continuous wave (QCW) high peak power 808 nm laser bar is fabricated with this high efficiency wafer. The bar with a filled factor of 85%, emitter number of 60, emitting width of 140 μm, and cavity length of 2 mm is measured at QCW mode. The peak power is 613 W with a slope efficiency of 1.34 W/A (drive current of 500 A, pulse width of 200 μs, repetition frequency of 400 Hz, duty ratio of 8%). The peak wavelength is about 807.46 nm with a spectral half-width full-maximum of 2.88 nm. The lifetime test is also demonstrated at QCW 300 W (8% duty ratio), the lifetime of five bars is all above 3.63×109 shot, the current fluctuation is lower than 10% at the constant power of 300 W, which satisfies commercial application requirement.

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王贞福, 李特, 杨国文, 宋云菲. 808 nm准连续600 W高功率半导体激光芯片研制[J]. 中国激光, 2017, 44(6): 0601004. Wang Zhenfu, Li Te, Yang Guowen, Song Yunfei. Development of 808 nm Quasi-Continuous Wave Laser Diode Bar with 600 W Output Power[J]. Chinese Journal of Lasers, 2017, 44(6): 0601004.

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808 nm准连续600 W高功率半导体激光芯片研制下载： 737次