半导体光电, 2016, 37 (3): 353, 网络出版: 2016-09-14
氯基条件下4H-SiC衬底的同质外延生长研究
Study on Chloride-based Homoepitaxial Growth on 4° Off-axis (0001) 4H-SiC Substrate
补充材料
闫果果, 张峰, 钮应喜, 杨霏, 刘兴昉, 王雷, 赵万顺, 孙国胜, 曾一平. 氯基条件下4H-SiC衬底的同质外延生长研究[J]. 半导体光电, 2016, 37(3): 353. YAN Guoguo, ZHANG Feng, NIU Yingxi, YANG Fei, LIU Xingfang, WANG Lei, ZHAO Wanshun, SUN Guosheng, ZENG Yiping. Study on Chloride-based Homoepitaxial Growth on 4° Off-axis (0001) 4H-SiC Substrate[J]. Semiconductor Optoelectronics, 2016, 37(3): 353.
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