高功率808nm AlGaAs/GaAs基半导体激光器巴条的热耦合特征
[1] John G. E, Mitral V, Gerald S. B, et al. High Power Diode Laser Arrays [J]. IEEE Journal of Quantum Electronics, 1992, 28(4): 952-965.
[2] Treusch H G, Ovtchinnikov A, He X, et al. High-brightness semiconductor laser sources for materials processing: stacking, beam shaping, and bars [J]. IEEE Journal of Selected Topics in Quantum Electronics, 2000, 6(4): 601-614.
[3] Ziegler M, Tomm J W, Elsaesser T, et al. Real-time thermal imaging of catastrophic optical damage in red-emitting high-power diode lasers [J]. Applied Physics Letters, 2008, 92(10): 103514.
[4] Qiao Y B, Feng S W, Xiong C, et al. Spatial hole burning degradation of AlGaAs/GaAs laser diodes. Applied Physics Letters, 2011, 99(10): 103506.
[5] Bull S, Tomm J W, Larkins E C. Identification of degradation mechanisms in high-power laser bars using by-emitter degradation studies [J]. Journal of Materials Science: Materials in Electronics, 2008, 19(1): s145-s149.
[6] Tomm J W, Ziegler M, Oudart M, et al. Gradual degradation of GaAs-based quantum well lasers, creation of defects, and generation of compressive strain [J]. physica status solidi(a), 2009, 206(8): 1912-1915.
[7] Rinner F, Rogg J, Kelemen M T, et al. Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers [J]. Journal of applied physics, 2003, 93(3): 1848-1850.
[8] Hempel M, Tomm J W, Hennig P, et al. Emission properties of diode laser bars during pulsed high-power operation [J]. Semiconductor Science and Technology, 2011, 26(9): 092001.
[9] Liu X, Hu M H, Caneau C G, et al. Thermal management strategies for high power semiconductor pump lasers [J]. IEEE Transactions on Components and Packaging Technologies, 2006, 29(2): 268-276.
[10] Fukuda M. Reliability and degradation of semiconductor lasers and LEDs[M]. Boston: Artech House, 1991.
[11] Laikhtman B, Gourevitch A, Westerfeld D, et al. Thermal resistance and optimal fill factor of a high power diode laser bar [J]. Semiconductor science and technology, 2005, 20(10): 1087-1095.
[12] Amuzuvi C K, Bull S, Tomm J W, et al. The impact of temperature and strain-induced band gap variations on current competition and emitter power in laser bars [J]. Applied Physics Letters, 2011, 98(24): 241108.
[13] Qiao Y, Feng S, Xiong C, et al. The thermal properties of AlGaAs/GaAs laser diode bars analyzed by the transient thermal technique [J]. Solid-State Electronics, 2013, 79: 192-195.
[14] Li J, Feng S, Zhang G, et al. Thermal analysis of high power laser diodes with multiple emitters [J]. Infrared and Laser Engineering(李静婉, 冯士维, 张光沉, 等. 多发光区大功率激光器的热特性分析. 红外与激光工程), 2012, 41(8):2027-2032.
[15] Martín-Martín A, Avella M, Iiguez M P, et al. Thermomechanical model for the plastic deformation in high power laser diodes during operation [J]. Journal of Applied Physics, 2009, 106(7): 073105.
[16] Ziegler M, Weik F, Tomm J W, et al. Transient thermal properties of high-power diode laser bars [J]. Applied physics letters, 2006, 89(26): 263506.
乔彦彬, 陈燕宁, 赵东艳, 张海峰. 高功率808nm AlGaAs/GaAs基半导体激光器巴条的热耦合特征[J]. 红外与毫米波学报, 2015, 34(1): 10. QIAO Yan-Bin, CHEN Yan-Ning, ZHAO Dong-Yan, ZHANG Hai-Feng. Thermal crosstalk characteristics in high-power 808nm AlGaAs/GaAs laser diode bars[J]. Journal of Infrared and Millimeter Waves, 2015, 34(1): 10.