光子学报, 2011, 40 (2): 199, 网络出版: 2011-03-08   

一种采用Li3N掺杂电子注入层的底发射倒置结构OLED的制备

Fabrication of Inverted Bottom Organic Light-emitting Device with Li3N n-type Doping Electron Injecting Layer
作者单位
吉林大学 电子科学与工程学院 集成光电子学国家重点联合实验室,长春 130012
引用该论文

张睿, 李传南, 李涛, 崔国宇, 侯晶莹, 赵毅, 刘式墉. 一种采用Li3N掺杂电子注入层的底发射倒置结构OLED的制备[J]. 光子学报, 2011, 40(2): 199.

张睿, 李传南, 李涛, 崔国宇, 侯晶莹, 赵毅, 刘式墉. Fabrication of Inverted Bottom Organic Light-emitting Device with Li3N n-type Doping Electron Injecting Layer[J]. ACTA PHOTONICA SINICA, 2011, 40(2): 199.

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    LI Chuan-nan, XIAO Bu-wen, HOU Jing-ying, et al. Fabrication of organic light-emitting devices using LiF/Al as cathode, layer[J]. Acta Photonica Sinica, 2001, 30(1):86-89.

张睿, 李传南, 李涛, 崔国宇, 侯晶莹, 赵毅, 刘式墉. 一种采用Li3N掺杂电子注入层的底发射倒置结构OLED的制备[J]. 光子学报, 2011, 40(2): 199. 张睿, 李传南, 李涛, 崔国宇, 侯晶莹, 赵毅, 刘式墉. Fabrication of Inverted Bottom Organic Light-emitting Device with Li3N n-type Doping Electron Injecting Layer[J]. ACTA PHOTONICA SINICA, 2011, 40(2): 199.

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