[1] Huffaker D L, Park G, Zou Z, et al. 1.3 μm room-temperature GaAs-based quantum-dot laser ［J］. Appl. Phys. Lett., 1998, 73(18):2564-2566.

[2] Blakesley J C, See P, Shields A J, et al. Efficient single photon detection by quantum dot resonant tunneling diodes ［J］. Phys. Rev. Lett., 2005, 94(6):0674011-1-4.

[3] Wu D Z, Wang W X, Yang C L, et al. InAs quantum dots with InGaAs cap layer infrared detector grown by MBE ［J］. Chin. J. Lumin.(发光学报), 2009, 30(2):209-213 (in Chinese).

[4] Shields A J, Sullivan M P, Farrer I, et al. A two-dimensional electron gas as a sensitive detector for time-resolved tunneling measurements on self-assembled quantum dots ［J］. Appl. Phys. Lett., 1999, 5(5):829-833.

[5] Narihiro M, Yusa G, Nakamura Y, et al. Resonant tunneling of electrons via 20 nm scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states ［J］. Appl. Phys. Lett., 1996, 70(1):105-107.

[6] Gansen E J, Rowe M A, Greene M B, et al. Photon-number discrimination using a semiconductor quantum dot optically gated field-effect transistor ［J］. Nat. Photonics, 2007, 1(5):585-587.

[7] Rowe M A, Gansen E J, Greene M, et al. Transport properties of a quantum dot based optically gated field-effect transistor ［J］. Appl. Phys. Lett., 2006, 89(25):2535051-1-4.

[8] Sakaki H, Yusa G, Someya T, et al. Transport-properties of 2-dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs dots ［J］. Appl. Phys. Lett., 1995, 67(23):3444-3446.

[9] Zhukov A A, Weichsel C, Beyer S, et al. Transport properties of a two-dimensional electron gas in the vicinity of quantum dots in the limit of strong disorder ［J］. Phys. Rev. B, 2003, 67(12):1253101-1-3.

[10] Kawazu T, Noda T, Kim H, et al. Scattering of 2D electrons by self-organized anti-dots in n-AlGaAs/GaAs heterojunction channels ［J］. Phys. Stat. Sol.(b), 2001, 224(3):707-710.

[11] Maximov M V, Tsatsulnikov A F, Volovik B V, et al. Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors ［J］. Phys. Rev. B, 2000, 62(24):16671-16680.

[12] Davies J H. Elastic and piezoelectric fields around a buried quantum dot: A simple picture ［J］. J. Appl. Phys., 1998, 84(3):1358-1365.

[13] Htch M J, Snoeck E, Kilaas R, et al. Quantitative measurement of displacement and strain fields from HREM micrographs ［J］. Ultramicroscopy, 1998, 74(3):131-146.

[14] He X Q, Wen C, Duan X F, et al. Identification of atomic steps at AlSb/GaAs hetero-epitaxial interface using geometric phase method by high-resolution electron microscopy ［J］. Mater. Lett., 2011, 65(3):456-459.

[15] Hessman D, Persson J, Pestol M E, et al. Electron accumulation in single InP quantum dots observed by photoluminescence ［J］. Phys. Rev. B, 2001, 64(23):2333081-1-4.

[16] Kim T W, Kim J H. Effects of two-dimensional electron gas on the optical properties of InAs/GaAs quantum dots in modulation-doped heterostructures ［J］. Appl. Phys. Lett., 2005, 86(2):0219161-1-3.

[17] Khmissi H, Sfaxi L, Bouzaene L, et al. Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction ［J］. J. Appl. Phys., 2010, 107(7):074307-1-5.

[18] Lee H S, Lee J Y, Kim T W, et al. Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots ［J］. Appl. Phys. Lett., 2003, 83(11):2256-2259.

[19] Liu Y M, Xu Z H, Yu Z Y, et al. Strain distribution and electronic structure of self-organized InAs/GaAs quantum dots ［J］. J. Nonlinear Opt. Phys. Mater., 2009, 18(4):553-560.

[20] Sears K, Wong-Leung J, Tan H H, et al. A transmission electron microscopy study of defects formed through the capping layer of self-assembled InAs/GaAs quantum dot samples ［J］. J. Appl. Phys., 2006, 99(11):1135031-1-4.

[21] Stern F, Sarma S D. Electron energy levels in GaAs-AlGaAs heterojunctions ［J］. Phys. Rev. B, 1984, 30(2):840-848.

[22] Daoudi M, Dhifallah I, Ouerghi A, et al. Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures ［J］. Superlatt. Microstruct., 2012, 51(3):497-505.