发光学报, 2014, 35 (6): 637, 网络出版: 2014-06-10
InAs量子点引入应力对调制掺杂结构中二维电子气输运特性的影响
Effect of Strain Derived from Embedded InAs Quantum Dots on The Transport Properties of Two-dimensional Gas in Modulation-doped Heterostructure
补充材料
田海涛, 王禄, 温才, 石震武, 孙庆灵, 高怀举, 王文新, 陈弘. InAs量子点引入应力对调制掺杂结构中二维电子气输运特性的影响[J]. 发光学报, 2014, 35(6): 637. TIAN Hai-tao, WANG Lu, WEN Cai, SHI Zhen-wu, SUN Qing-ling, GAO Huai-ju, WANG Wen-xin, CHEN Hong. Effect of Strain Derived from Embedded InAs Quantum Dots on The Transport Properties of Two-dimensional Gas in Modulation-doped Heterostructure[J]. Chinese Journal of Luminescence, 2014, 35(6): 637.
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