[1] MAEKAWA T,KANAYA H,SUZUKI S,et al. Oscillation up to 1.92 THz in resonant tunneling diode by reduced conduction loss[J]. Applied Physics Express, 2016,9(2):024101-1-024101-4.

[2] TERANISHI A,SHIZUNO K,SUZUKI S,et al. Fundamental oscillation up to 1.08 THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay[J]. IEICE Electronics Express, 2012,9(5):385-390.

[3] GOLKA S,PFLUGL C,SCHRENK W,et al. Negative differential resistance in dislocation-free GaNAlGaN double-barrier diodes grown on bulk GaN[J]. Applied Physics Letters, 2006,88(17):172106-1-172106-3.

[4] KIKUCHI A,BANNAI R,KISHINO K. AlGaN resonant tunneling diodes grown by rf-MBE[J]. Physica Status Solidi (A), 2001,188(1):187-190.

[5] KIKUCHI A,BANNAI R,KISHINO K,et al. AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy[J]. Applied Physics Letters, 2002,81(9):1729-1731.

[6] BAYRAM C,VASHAEI Z,RAZEGHI M. AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition[J]. Applied Physics Letters, 2010,96(4):042103-1-042103-3.

[7] VASHAEI Z, BAYRAM C, RAZEGHI M. Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature[J]. Journal of Applied Physics, 2010, 107(8):083505-1-5.

[8] BAYRAM C,VASHAEI Z,RAZEGHI M. Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes[J]. Applied Physics Letters, 2010,97(9):092104-1-3.

[9] BAYRAM C,VASHAEI Z,RAZEGHI M. Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes[J]. Applied Physics Letters, 2010,97(18): 181109-1-3.

[10] BELYAEV A E,MAKAROVSKY O,WALKER D J,et al. Resonance and current instabilities in AlN/GaN resonant tunnelling diodes[J]. Physica E: low-dimensional systems and nanostructures, 2004,21(2):752-755.

[11] ZAINAL N,NOVIKOV S V,MELLOR C J,et al. Current-voltage characteristics of zinc-blende (cubic) Al0. 3Ga0. 7N/GaN double barrier resonant tunneling diodes[J]. Applied Physics Letters, 2010,97(11):2102-1-3.

[12] SAKR S,WARDE E,TCHERNYCHEVA M,et al. Origin of the electrical instabilities in GaN/AlGaN double-barrier structure[J]. Applied Physics Letters, 2011,99(14):142103-1-3.

[13] SAKR S,KOTSAR Y,TCHERNYCHEVA M,et al. Resonant tunneling transport in a GaN/AlN multiple-quantum-well structure[J]. Applied Physics Express, 2012,5(5):052203-1-3.

[14] NAGASE M, TOKIZAKI T. Bistability characteristics of GaN/AlN resonant tunneling diodes caused by intersubband transition and electron accumulation in quantum well[J]. IEEE Transactions on Electron Devices, 2014,61(5):1321-1326.

[15] NAGASE M,TAKAHASHI T,SHIMIZU M. Investigating the bistability characteristics of GaN/AlN resonant tunneling diodes for ultrafast nonvolatile memory[J]. Japanese Journal of Applied Physics, 2015,54(3):034201-1-8.

[16] CHEN Haoran,HAO Yue. Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes[J]. Journal of Applied Physics, 2014,116(7):074510-1-7.

[17] WARDE E,SAKR S,TCHENYCHEVA M,et al. Vertical transport in GaN/AlGaN resonant tunneling diodes and super lattices[J]. Journal of Electronic Materials, 2012,41(5):965-970.

[18] BHOURI A,RACHED A,LAZZARI J L. Resonant tunneling transport in Alz Ga1 傆bz N/Inx Ga1 傆bx N/Alz Ga1 傆bz N/Iny Ga1 傆by N quantum structures[J]. Journal of Physics D: Applied Physics, 2015,48(38):385102.

[19] YANG Lin’an,LI Yue,WANG Ying, et al. Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes[J]. Journal of Applied Physics, 2016,119(16):164501-1-9.

[20] AMBACHER O. Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications[M]. New York: Springer Science and Business Media, LLC, 2008:35-62.