太赫兹科学与电子信息学报, 2017, 15 (5): 855, 网络出版: 2018-01-25
子阱及非对称势垒对GaN RTD电学特性的影响
Influence of sub-quantum-well and asymmetric quantum-barrier structures on the electrical characteristics of GaN RTD
补充材料
苏娟, 谭为, 高博. 子阱及非对称势垒对GaN RTD电学特性的影响[J]. 太赫兹科学与电子信息学报, 2017, 15(5): 855. SU Juan, TAN Wei, GAO Bo. Influence of sub-quantum-well and asymmetric quantum-barrier structures on the electrical characteristics of GaN RTD[J]. Journal of terahertz science and electronic information technology, 2017, 15(5): 855.