子阱及非对称势垒对GaN RTD电学特性的影响
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苏娟, 谭为, 高博. 子阱及非对称势垒对GaN RTD电学特性的影响[J]. 太赫兹科学与电子信息学报, 2017, 15(5): 855. SU Juan, TAN Wei, GAO Bo. Influence of sub-quantum-well and asymmetric quantum-barrier structures on the electrical characteristics of GaN RTD[J]. Journal of terahertz science and electronic information technology, 2017, 15(5): 855.