利用自主开发的2维半导体器件-电路联合仿真器, 研究了CMOS反相器在1 MHz～20 GHz电磁干扰作用下的响应。仿真结果表明：低频电磁干扰通过控制CMOS反相器中MOS管的导通、截止影响CMOS反相器的正常工作；高频电磁干扰通过MOS管中的本征电容耦合到输出端, 干扰CMOS反相器的工作状态；CMOS反相器对于电磁干扰的敏感度随着干扰频率上升而不断降低。

The effects of electromagnetic interference with increasing frequencies from 1 MHz to 20 GHz on CMOS inverter have been studied using our two dimensional mixed-level circuit and semiconductor device simulator. The simulation results show that the channel of MOS devices could be formed or cutoff deliberately by electromagnetic interference at the lower frequency range. As a result, the normal operation of CMOS inverter is disturbed. Electromagnetic interference at the higher frequency range could couple to the output through the small intrinsic capacitances in MOS devices to upset the operation of CMOS inverter. Moreover, electromagnetic interference at the lower frequency range causes greater upsets than that at the higher frequency range.