CMOS反相器的电磁干扰频率效应

陈杰; 杜正伟

doi:doi:10.3788/hplpb20122401.0147

强激光与粒子束, 2012, 24 (1): 147, 网络出版: 2012-02-14

CMOS反相器的电磁干扰频率效应

Effect of electromagnetic interference frequency on CMOS inverters

论文大纲

陈杰 ^*杜正伟

作者单位

清华大学电子工程系, 微波与数字通信技术国家重点实验室, 北京 100084

CMOS反相器器件物理模拟电磁干扰翻转耦合 CMOS inverter device simulation electromagnetic interference flip coupling

摘要

利用自主开发的2维半导体器件-电路联合仿真器, 研究了CMOS反相器在1 MHz～20 GHz电磁干扰作用下的响应。仿真结果表明：低频电磁干扰通过控制CMOS反相器中MOS管的导通、截止影响CMOS反相器的正常工作；高频电磁干扰通过MOS管中的本征电容耦合到输出端, 干扰CMOS反相器的工作状态；CMOS反相器对于电磁干扰的敏感度随着干扰频率上升而不断降低。

Abstract

The effects of electromagnetic interference with increasing frequencies from 1 MHz to 20 GHz on CMOS inverter have been studied using our two dimensional mixed-level circuit and semiconductor device simulator. The simulation results show that the channel of MOS devices could be formed or cutoff deliberately by electromagnetic interference at the lower frequency range. As a result, the normal operation of CMOS inverter is disturbed. Electromagnetic interference at the higher frequency range could couple to the output through the small intrinsic capacitances in MOS devices to upset the operation of CMOS inverter. Moreover, electromagnetic interference at the lower frequency range causes greater upsets than that at the higher frequency range.

参考文献

[1] Bckstrm M G, Lvstrand K G. Susceptibility of electronic systems to high-power microwaves: summary of test experience［J］. IEEE Trans on Electromagnetic Compatibility, 2004, 46(3):396-404.

[2] Nitsch D, Camp M, Sabath F, et al. Susceptibility of some electronic equipment to HPEM threats［J］. IEEE Trans on Electromagnetic Compatibility, 2004, 46(3):380-390.

[3] Wang H, Li J, Li H, et al. Experimental study and SPICE simulation of CMOS inverters latch-up effects due to high power microwave interference［J］. Progress in Electromagnetics Research, 2008, 87:313-330.

[4] Kim K, Iliadis A A. Critical upsets of CMOS inverters in static operation due to high-power microwave interference［J］. IEEE Trans on Electromagnetic Compatibility, 2007, 49(4):876-885.

[5] Kim K, Iliadis A A. Impact of microwave interference on dynamic operation and power dissipation of CMOS inverters［J］. IEEE Trans on Electromagnetic Compatibility, 2007, 49(2): 329-338.

[6] 陈曦, 杜正伟, 龚克. 外电路在电磁脉冲对双极型晶体管作用过程中的影响［J］.强激光与粒子束, 2007, 19(7):1197-1202. (Chen Xi, Du Zhengwei, Gong Ke. Influence of circuit during injection of EMP into bipolar junction transistor. High Power Laser and Particle Beams, 2007, 19(7): 1197-1202)

[7] 张义门. 一种二维MOSFET计算机模拟程序的有限差分算法［J］. 西北电讯工程学院学报, 1985, 1(1):16-24.(Zhang Yimen. A finite difference method for 2-D MOSFET’s simulation. Journal of Northwest Telecommunication Engineering Institute, 1985, 1(1):16-24)

[8] Selberherr S. 半导体器件的分析与模拟［M］. 上海: 上海科学技术文献出版社, 1988:156-163.(Selberherr S. Analysis and simulation of semiconductor devices. Shanghai: Shanghai Scientific and Technological Literature Publishing House, 1988: 156-163)

[9] 黄均鼐, 汤庭鳌. 双极型与MOS半导体器件原理［M］. 上海: 复旦大学出版社, 1990: 305-306.(Huang Junnai, Tang Ting’ao. Mechanism of bipolar and MOS semiconductor devices. Shanghai: Fudan University Press, 1990: 305-306)

[10] Kim K, Iliadis A A, Granatstein V L. Effects of microwave interference on the operational parameters of n-channel enhancement mode MOSFET devices in CMOS integrated circuits［J］. Solid-State Electronics, 2004, 48(10/11): 1795-1799.

陈杰, 杜正伟. CMOS反相器的电磁干扰频率效应[J]. 强激光与粒子束, 2012, 24(1): 147. Chen Jie, Du Zhengwei. Effect of electromagnetic interference frequency on CMOS inverters[J]. High Power Laser and Particle Beams, 2012, 24(1): 147.

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