激光与光电子学进展, 2015, 52 (2): 021602, 网络出版: 2015-01-21
基于SiO2膜的GaInP/AlGaInP无杂质空位扩散诱导量子阱混杂的研究
Impurity-Free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using SiO2 Encapsulation
引用该论文
林涛, 张浩卿, 孙航, 王勇刚, 林楠, 马骁宇. 基于SiO2膜的GaInP/AlGaInP无杂质空位扩散诱导量子阱混杂的研究[J]. 激光与光电子学进展, 2015, 52(2): 021602.
Lin Tao, Zhang Haoqing, Sun Hang, Wang Yonggang, Lin Nan, Ma Xiaoyu. Impurity-Free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using SiO2 Encapsulation[J]. Laser & Optoelectronics Progress, 2015, 52(2): 021602.
林涛, 张浩卿, 孙航, 王勇刚, 林楠, 马骁宇. 基于SiO2膜的GaInP/AlGaInP无杂质空位扩散诱导量子阱混杂的研究[J]. 激光与光电子学进展, 2015, 52(2): 021602. Lin Tao, Zhang Haoqing, Sun Hang, Wang Yonggang, Lin Nan, Ma Xiaoyu. Impurity-Free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using SiO2 Encapsulation[J]. Laser & Optoelectronics Progress, 2015, 52(2): 021602.
PDF全文
