[1] Kadri V, Lester J K, Donald E C, et al. 2048×2048 HgCdTe focal plane arrays for astronomy applications[C]Proc of SPIE. 1999, 3698:24-25.

[2] 王小坤, 曾智江, 朱三根, 等. 中波2048元长线阵碲镉汞焦平面杜瓦组件[J]. 红外与激光工程, 2011, 40(4): 611-614.(Wang Xiaokun, Zeng Zhijiang, Zhu Sangen, et al. Dewar for medium wave 2048 pixel long linear HgCdTe IRFPA.Infrared and Laser Engineering, 2011, 40(4): 611-614)

[3] Philippe M T, Patricia C, Fillon P, et al. Large staring arrays at SOFRADIR[C]Proc of SPIE. 2003, 4820:418-428.

[4] Castelein P. New generation of long linear butted HgCdTe arrays for high resolution infrared imaging[C]Proc of SPIE. 2003, 4820:252-259.

[5] Rainer B, Wolfgang A C, Koch R, et al. Focal plane arrays: MCT, quantum wells, PtSi[C]Proc of SPIE. 1998, 3436:359-374.

[6] Walter R D, Meimei Z T. Application of MCT and QWIP to ballistic missile defense[C]Proc of SPIE. 1988, 3379:434-440.

[7] Jiang Tian, Cheng Xiangai, Zheng Xin, et al. The over-saturation phenomenon of a Hg0.46Cd0.54Te photovoltaic detector irradiated by a CW laser[J]. Semiconductor Science and Technology, 2011, 26:115004.

[8] Jiang Tian, Cheng Xiangai, Li Li, et al. Study of photovoltaic effect photovoltaic HgCdTe detector irradiated by spectral unrelated laser[J]. Optics and Spectroscopy, 2011, 111(2): 162-165.

[9] Jiang Tian, Zheng Xin, Cheng Xiangai, et al. Effects of thermally generated carrier and temperature dependence mobility in InSb photoconductive detector under CW 10.6 μm laser irradiation[J]. Semiconductor Science and Technology, 2012, 27:015020.

[10] 江天, 郑鑫, 程湘爱, 等. 光导型碲镉汞探测器在波段外连续激光辐照下的载流子输运[J]. 红外与毫米波学报, 2012, 31(3):1-6.(Jiang Tian, Zheng Xin, Cheng Xiangai, et al. The carrier transportation of photoconductive HgCdTe detector irradiated by CW band-off laser. J Infrared Millim Waves, 2012, 31(3):1-6)

[11] 江天, 程湘爱, 郑鑫, 等. 光伏碲镉汞探测器在波段内连续激光辐照下的非线性响应机理研究[J]. 物理学报, 2012, 61: 137304.(Jiang Tian, Cheng Xaingai, Zheng Xin, et al. Investigation of the nonlinear response mechanism of photovoltaic HgCdTe detector irradiated by CW band-in laser. Acta Phys Sin, 2012, 61:137304)

[12] 江天, 程湘爱, 江厚满, 等. 光伏半导体器件对能量小于禁带宽度光子的响应机理研究[J]. 物理学报, 2011, 60:107305.(Jiang Tian, Cheng Xiangai, Jiang Houman, et al. Investigation of the response mechanism of photovoltaic semiconductor with sub-bandgap photons. Acta Phys Sin, 2011, 60:107305)

[13] 江天, 程湘爱, 李莉, 等. 实验研究光谱非相关激光辐照下光伏型HgCdTe探测器芯片前后表面的温升[J]. 国防科技大学学报, 2011,33(2):9-12.(Jiang Tian, Cheng Xiangai, Li Li, et al. The experimental research of temperature rise of the fore and after surface of the chip of photovoltaic HgCdTe detector irradiated by spectral unrelated laser. Journal of National University of Defense Technology, 2011, 33(2): 9-12)

[14] 王晨飞, 陈洪雷, 李言谨. HgCdTe光伏探测器抑制背景通量的研究[J]. 激光与红外, 2007, 37(13): 935-937.(Wang Chenfei, Cheng Honglei, Li Yanjin. Study of background illumination reduction of HgCdTe photo-voltage detector.Laser and Infrared, 2007, 37(13): 935-937)

[15] Musca C A, Dell J M, Faraone L, et al. Analysis of crosstalk in HgCdTe p-on-n heterojunction photovoltaic infrared sensing arrays[J]. Journal of Electronic Materials, 1999, 28(6):618-623.

[16] 邓宁, 田立林, 任敏. 半导体器件基础[M]. 北京: 清华大学出版社, 2008: 530-535.(Deng Ning, Tian Lilin, Ren Min. Fundamentals of semiconductor devices. Beijing: Tsinghua university Press, 2008: 530-535)

[17] 全知觉, 叶振华, 胡伟达, 等. 降低平面结型碲镉汞焦平面阵列光串音的结构优化研究[J]. 红外与毫米波学报, 2006, 25(5):329-337.(Quan Zhijue, Ye Zhenhua, Hu Weida, et al. Study on structural optimization of decreasing the crosstalk of plannar HgCdTe focal plane arrays. J Infrared Millim Waves, 2006, 25(5): 329-337)

[18] 何力, 杨定江, 倪国强, 等. 先进焦平面技术导论[M]. 北京: 国防工业出版社, 2011: 54-64. (He Li, Yang Dingjiang, Ni Guoqiang, et al. Introduction to advanced focal plane arrays. Beijing : National Defence Industry Press, 2011: 54-64)

[19] 褚君浩. 窄禁带半导体物理学[M]. 北京: 科学出版社, 2005: 564-571.(Chu Junhao. Narrow-bandgap semiconductor physics. Beijing: Science Press, 2005: 564-571)

[20] Scott W. Electron mobility in Hg1-xCdxTe[J]. Appl Phys, 1972, 43(3): 1055-1062.