脉冲激光作用单晶硅的等离子体光谱分析

刘丽炜; 曲璐; 谭勇; 张喜和

强激光与粒子束, 2010, 22 (8): 1815, 网络出版: 2010-09-15

脉冲激光作用单晶硅的等离子体光谱分析

Plasma spectrum analysis of monocrystalline silicon irradiated by pulsed laser

论文大纲

刘丽炜 ^*曲璐谭勇张喜和

作者单位

长春理工大学理学院, 长春 130022

激光与物质相互作用等离子体激光发射光谱光谱分析 interaction between laser and material laser plasma laser emission spectrum spectrum analysis

摘要

从激光与物质相互作用理论出发, 对脉冲激光作用单晶硅的热特性进行分析。建立一套实验装置, 所用激光光源的波长为1 064 nm,脉宽为10 ns, 重复频率为1 Hz。得到单晶硅的等离子体谱及热辐射谱, 在单晶硅的光电性质基础上对其热表面损伤进行理论分析。提取380~460 nm波段的单晶硅等离子体光谱, 分析了谱图中SiⅠ390.52 nm, SiⅡ385.51 nm,SiⅡ413.12 nm三条谱线的相对强度与激光输出功率密度的对应关系。

Abstract

Based on the theory of interaction between laser and material, we analyze thermal characteristics of pulsed laser irradiated monocrystalline silicon. By setting up experiment equipment including a laser lamp-house, the laser wavelength is 1 064 nm, the pulse-width is 10 ns and the repetition frequency is 1 Hz, we get the plasma and the thermal radiation spectrum of the monocrystalline silicon. We theoretically analyze the high temperature surface damnification of monocrystalline silicon according to its optical-electrical characters. After analysing waveband of the plasma spectrum of monocrystalline silicon in 380~460 nm, we find out the corresponding relation between the export frequency density of the laser and the comparative intensity of the three spectral lines, SiⅠ 390.52 nm, SiⅡ385.51 nm, SiⅡ413.12 nm.

参考文献

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刘丽炜, 曲璐, 谭勇, 张喜和. 脉冲激光作用单晶硅的等离子体光谱分析[J]. 强激光与粒子束, 2010, 22(8): 1815. Liu Liwei, Qu Lu, Tan Yong, Zhang Xihe. Plasma spectrum analysis of monocrystalline silicon irradiated by pulsed laser[J]. High Power Laser and Particle Beams, 2010, 22(8): 1815.

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