半导体光电, 2017, 38 (4): 498, 网络出版: 2017-08-30
背照式InGaN紫外探测器的制备与数值模拟
Fabrication and Numerical Simulation of Back-Illuminated InGaN Ultraviolet Photodetector
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黄波, 许金通, 王玲, 张燕, 李向阳. 背照式InGaN紫外探测器的制备与数值模拟[J]. 半导体光电, 2017, 38(4): 498. HUANG Bo, XU Jintong, WANG Lin, ZHANG Yan, LI Xiangyang. Fabrication and Numerical Simulation of Back-Illuminated InGaN Ultraviolet Photodetector[J]. Semiconductor Optoelectronics, 2017, 38(4): 498.