背照式InGaN紫外探测器的制备与数值模拟
[1] Nakamura S, Senoh M, Iwasa N, et al. High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures[J]. Jpn. J. App. Phys., 1995, 34(7A): L797-L799.
[2] Su Y K,Chang S J, Chen C H, et al. GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes[J]. Sensors J. IEEE, 2002, 2(4): 366-371.
[3] Ji L W, Su Y K. InGaN quantum dot photodetectors[J]. Solid-State Electro., 2003, 47(10): 1753-1756.
[4] Rivera C, Pereiro J, álvaro Navarro, et al. Advances in group-Ⅲ-nitride photodetectors[J]. Open Electrical & Electron. Engin. J., 2010,4(1): 1-9.
[5] Mishra U K, Parikh P, Wu Y F. AlGaN/GaN HEMTs-an overview of device operation and applications[J]. Proc. IEEE, 2002, 90(6): 1022-1031.
[6] Wu J, Walukiewicz W, Shan W, et al. Temperature dependence of the fundamental band gap of InN[J]. J. Appl. Phys., 2003, 94(7): 4457-4460.
[7] Lin J C, Su Y K, Chang S J, et al. InN grown on GaN/sapphire templates at different temperatures by MOCVD[J]. Opt. Mat., 2007, 30(4): 517-520.
[8] Ager Lii J W, Walukiewicz W. High efficiency, radiation-hard solar cells[R]. Office of Scientific & Technical Information Technical Reports, 2004.
[9] Jani O, Honsberg C, Asghar Ali, et al. Characterization and analysis of InGaN photovoltaic devices[C]// Proc. of IEEE Conf. on Photovoltaic Specialists, 2005, 29(11): 37-42.
[10] Tian Y, Dai J N, Xiong H, et al. Effects of the Ⅴ/Ⅲ ratio of a low-temperature GaN buffer layer on the structural and optical properties of a-GaN films grown on r-plane sapphire substrates by MOCVD[J]. Chin. Phys. Lett., 2012, 29(8): 1028-1032.
[11] Kim K S, Lee J L, Lee J W, et al. Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment[J]. Appl. Phys. Lett., 1998, 73(20): 2953-2955.
[12] 陈伯良, 李向阳. 航天红外成像探测器[M]. 北京: 科学出版社, 2016: 50-51.
Chen Boliang, Li Xiangyang. Aerospace Infrared Imaging Detector[M]. Beijing: Science Press, 2016: 50-51.
[13] Monemar B, Bergman J P, Buyanova I A, et al. Free Excitons in GaN[M]. England: Cambridge University Press, 1996.
黄波, 许金通, 王玲, 张燕, 李向阳. 背照式InGaN紫外探测器的制备与数值模拟[J]. 半导体光电, 2017, 38(4): 498. HUANG Bo, XU Jintong, WANG Lin, ZHANG Yan, LI Xiangyang. Fabrication and Numerical Simulation of Back-Illuminated InGaN Ultraviolet Photodetector[J]. Semiconductor Optoelectronics, 2017, 38(4): 498.