[1] Fan J C,Tsaur B Y,Palm B J.Optimal design of hight-efficiency tandem cells.Proceedings of the 16th IEEE Photovoltaic Specialists Conference (IEEE,New York),1982(2):692～701

[2] Cotal H L,Lillington D R,Ermer J H,et al.Highly efficient 32.3% monolithic GaInP/GaAs/Ge tirple junction comcentrator solar cells.Program and Proceedings:NCPV Program Review Meeting 2000,16-19 April 2000:111～112

[3] 高鸿楷,赵星.GaAs/Ge的MOCVD生长研究.光子学报,1996,25(6):518～520

[4] 高鸿楷,吴龙胜.新型空间太阳能电池研究.1997年全国GaAs及其有关化合物会议,湖南张家界,1997,11,354～355

[5] Kroemer H.Suppression of antiphase disorder in GaAs growth on relaxed GeSi buffers By metal-organic chemical vapor deposition.J Crystal Growth,(1987),81(2):193～197

[6] Ringel S A,Sieg R M.Anti-phase domain-free GaAs on Ge substrate growth by MBE for space solar cell application.Proceedings of the 26th IEEE Photovoltaic Specialists Conference (IEEE,Anaheim,USA),1997,(3):793～797

[7] Li Y,Salviati G M,Bongers M G,et al.On the formation of antiphase domains in the system of GaAs on Ge.J Cryst Growth (1996),163(2):195～202

[8] McMahon W E,Olson J M.Atomic-resolution STM study of a structural phase transition of steps on vicinal As/Ge(100).Physical Review (B),1999,60(23):15999～16005

[9] Timo G,Flores C.The effect of the growth rate on the low pressure metalorganic vapour epitaxy of GaAs/Ge heterostructures.J Crystal Growth,1992,125(3):440～448