ICP刻蚀气压对碲镉汞电学性能的影响
操神送, 杜云辰, 朱龙源, 兰添翼, 赵水平, 罗毅, 乔辉. ICP刻蚀气压对碲镉汞电学性能的影响[J]. 半导体光电, 2017, 38(1): 61.
CAO Shensong, DU Yunchen, ZHU Longyuan, LAN Tianyi, ZHAO Shuiping, LUO Yi, QIAO Hui. Effects of ICP Etching Pressure on Electrical Properties of HgCdTe[J]. Semiconductor Optoelectronics, 2017, 38(1): 61.
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操神送, 杜云辰, 朱龙源, 兰添翼, 赵水平, 罗毅, 乔辉. ICP刻蚀气压对碲镉汞电学性能的影响[J]. 半导体光电, 2017, 38(1): 61. CAO Shensong, DU Yunchen, ZHU Longyuan, LAN Tianyi, ZHAO Shuiping, LUO Yi, QIAO Hui. Effects of ICP Etching Pressure on Electrical Properties of HgCdTe[J]. Semiconductor Optoelectronics, 2017, 38(1): 61.
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