刻蚀改变InGaN/AlGaN应变多量子阱发光特性
曹萌, 吴惠桢, 劳燕锋, 刘成, 谢正生. 刻蚀改变InGaN/AlGaN应变多量子阱发光特性[J]. 光学学报, 2007, 27(3): 494.
曹萌, 吴惠桢, 劳燕锋, 刘成, 谢正生. Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching[J]. Acta Optica Sinica, 2007, 27(3): 494.
[2] Mo Chunlan, Li Peng, Wang Li et al.. Properties dependence of GaN∶Si Films on gas flow mixture[J]. Acta Optica Sinica, 2002, 22(2): 181~185 (in Chinese)
莫春兰,李鹏,王立 等. 气流混合对生长GaN∶Si 膜性能影响的研究[J]. 光学学报, 2002, 22(2): 181~185
[4] . Fujii, Y. Gao, R. Sharma et al.. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening[J]. Appl. Phys. Lett., 2004, 84(6): 855-857.
[5] . . Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall[J]. IEEE Photon Technol. Lett., 2005, 17(10): 2038-2040.
[6] . W. Chow, A. F. Wright, A. Girndt et al.. Microscopic theory of gain for an InGaN/AlGaN quantum well laser[J]. Appl. Phys. Lett., 1997, 71(18): 2608-2610.
[7] . T. Chu, C. C. Kao et al.. Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface[J]. Nanotechnology, 2005, 16: 1844-1848.
[8] . W. Kin, H. Y. Lee, M. C. Yoo et al.. Highly efficient vertical laser-liftoff GaN-based light-emitting diodes formed by optimization of the cathode structure[J]. Appl. Phys. Lett., 2005, 86: 052108-1.
[9] . Statistical ray optics[J]. J. Opt. Soc. Am., 1982, 72(7): 899-907.
[10] . . Passivation of InGaAs/InP surface quantum wells by ion-gun hydrogen[J]. Appl. Phys. Lett., 1994, 64(16): 2658-2660.
[11] M. Rahman. Channeling and diffusion in dry-etched damage[J]. J. Appl. Phys., 82(5): 2215~2224
[12] . Habere, Monica Hansen, Steve Denbaars. Channeling as a mechanism for dry etch damage in GaN[J]. Appl. Phys. Lett., 2000, 76(26): 3941-3943.
[13] . Boguslawski, E. L. Briggs, J. Bernholc. Native defects in gallium nitride[J]. Phys. Rev. B, 1995, 51: 17255-17259.
[14] Xu Xurong, Su Mianzeng. Luminescent Science and Luminescent Material[M]. Beijing: Publishing Company of Chemical Industry, 2004. 74~82 (in Chinese)
徐叙瑢, 苏勉曾. 发光学与发光材料[M]. 北京: 化学工业出版社, 2004. 74~82
[15] . S. Djie, T. Mei, J. Arokiaraj. Photoluminescence enhancement by inductively coupled argon plasma exposure for quantum well intermixing[J]. Appl. Phys. Lett., 2003, 83(1): 60-62.
[16] Takashi Mukai, Daisuke Morita, Shuji Nakamura. High-power UV InGaN/AlGaN double-heterostructure LEDs[J]. J. Cryst. Growth., 1998, 189/190: 778~781
曹萌, 吴惠桢, 劳燕锋, 刘成, 谢正生. 刻蚀改变InGaN/AlGaN应变多量子阱发光特性[J]. 光学学报, 2007, 27(3): 494. 曹萌, 吴惠桢, 劳燕锋, 刘成, 谢正生. Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching[J]. Acta Optica Sinica, 2007, 27(3): 494.