A new method to characterize the metallic-oxide films for grayscale lithography

SUN Li-ping; ZHANG Shuang-gen; WANG Zhe; DENG Jia-chun; Lü Jiang

doi:doi:10.1007/s11801-013-2351-9

光电子快报（英文版）, 2013, 9 (1): 34, Published Online: Oct. 12, 2017

A new method to characterize the metallic-oxide films for grayscale lithography

论文大纲

SUN Li-ping ^1,*ZHANG Shuang-gen ²WANG Zhe ¹DENG Jia-chun ¹Lü Jiang ¹

Author Affiliations

¹ School of Science, Tianjin University of Technology, Tianjin 300384, China

² Tianjin Key Laboratory of Film Electronic and Communication Device, Engineering Research Center of Communication

Abstract

In order to characterize the metallic-oxide grayscale films fabricated by laser direct writing (LDW) in indium film, a new method with micro-Raman spectroscopy and atomic force microscope (AFM) is proposed. Raman spectra exhibit the characteristic band of In₂O₃ centered at 490 cm^-1, in which the intensities increase with the decreasing optical density of the In-In₂O₃ grayscale films. The mapping information of Raman spectra shows that the signal intensities of the film in the same grayscale area are uniform. Combining with the information of In-In₂O₃ grayscale film from AFM, the quantitative relationship between the concentration of In₂O₃ and the Raman signal intensity is shown. Compared with the conventional methods, the resolution of micro-Raman scattering method is appropriate, and the scanning speed is proper to analyze the structure of metallic-oxide grayscale films.

References

[1] J. D. Rogers, A. H. O. K rkk inen, T. Tkaczyk, J. T. Rantala and M. R. Descour, Opt. Express 12, 1294 (2004).

[2] Y. Chen, G. Shen, L. Meng, L. Ma and Ch. Li, Journal of Optoelectronics · Laser 22, 1451 (2011). (in Chinese)

[3] M. Christophersen and B. F. Phlips, Appl. Phys. Lett. 92, 194102 (2008).

[4] C. M. Waits, A. Modafe and R. Ghodssi, J. Micromech. Microeng. 13, 170 (2003).

[5] X. Chen, D. Han, D. Zhang, J. Sun, X. Geng and Y. Zhao, Journal of Optoelectronics · Laser 22, 1022 (2011). (in Chinese)

[6] Y. Shigesato, S. Takaki and T. Haranoh, J. Appl. Phys. 71, 3356 (1992).

[7] J. Tamaki, C. Naruo, Y. Yamamoto and M. Mastuoka, Sens. Actuators B 83, 190 (2002).

[8] D. H. Zhang, C. Li, S. Han, X. L. Liu, T. Tang, W. Jin and C. W. Zhou, Appl. Phys. Lett. 82, 112 (2003).

[9] P. Nguyen, H. T. Ng, T. Yamada, M. K. Smith, J. Li, J. Han and M. Meyyappan, Nano. Lett. 4, 651 (2004).

[10] C. Guo, J. Zhang, J. Miao, Y. Fan and Q. Liu, Opt. Express 18, 2621 (2010).

[11] C.Guo, S. Cao, P. Jiang, Y. Fang, J. Zhang,Y. Fan, Y. Wang, W. Xu, Z. Zhao and Q. Liu, Opt. Express 17, 19981 (2009).

[12] C. Guo, Z. Zhang, S. Cao and Q. Liu, Opt. Lett. 34, 2820 (2009).

[13] G. Kavei, M. H. Sarrafi and C. Falamaki, Meas. Sci. Technol. 18, 1441 (2007).

[14] A. J. Lockwood, M. S. Bobji, R. J. T. Bunyan and B. J. Inkson, J. Phys. Conf. Ser. 241, 012056 (2010).

SUN Li-ping, ZHANG Shuang-gen, WANG Zhe, DENG Jia-chun, Lü Jiang. A new method to characterize the metallic-oxide films for grayscale lithography[J]. 光电子快报（英文版）, 2013, 9(1): 34.

A new method to characterize the metallic-oxide films for grayscale lithography

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