入射光束角度及强度偏差对多光束干涉光刻结果的影响

马丽娜; 张锦; 蒋世磊; 孙国斌; 杨国锋; 杭凌侠; 弥谦; 计玮

doi:doi:10.3788/gzxb20154410.1011003

光子学报, 2015, 44 (10): 1011003, 网络出版: 2015-11-30

入射光束角度及强度偏差对多光束干涉光刻结果的影响

Influence on Patterns Quality of Multi-beam Interference Lithography Caused by the Deviations of Incidence Azimuth Angle and Intensity of Light

论文大纲

马丽娜 ^*张锦蒋世磊孙国斌杨国锋杭凌侠弥谦计玮

作者单位

西安工业大学光电工程学院,西安 710021

摘要

建立了多光束干涉光刻干涉场内光强分布的数学模型,仿真计算了双光束、三光束、四光束干涉曝光情况下,入射光束存在角度偏差以及各入射光强不同时的干涉图样,并与理想状态的模拟结果进行对比.结果表明：光束入射角度偏差主要影响干涉图样的形状和周期;入射光的光强不同是降低图形对比度的主要因素.利用402 nm波长激光光源进行多光束干涉光刻实验.设定激光器输出功率32 mW,每两束光夹角为16°,通过控制曝光、显影工艺,双光束干涉光刻产生周期为1.4 μm的光栅、点阵和孔阵结构,三光束干涉光刻产生周期为1.7 μm的六边形图形阵列.该模型可为利用干涉光刻技术制备微细周期结构,提高光刻图形质量,提供一定的理论参考.

Abstract

Based on the mathematical model of light intensity distribution in multi-beam interference field,the patterns have been calculated and stimulated respectively for two beams,three beams and four beams interference exposure,in the case of having incidence angle errors and unequal intensity of each beam. The stimulated results have been analyzed and compared with that in ideal situation. The study results show that angel deviation of incident beam mainly affects the shape and period of interference pattern,and inequality of light intensity of each incident beam is the main factor that leads to decrease of pattern contrast. The multi-beam interference lithography experiments have been done by using a laser source with the wavelength of 402 nm. Under the conditions of 32 mW laser output power and 16° angle between two incident beams,by controlling exposure dose and development process,the gratings,dots and holes array with the period of about 1.4 μm have been generated by two-beam interference lithography,and the hexagon array with the period of about 1.7 μm have been got by three-beam interference lithography. The results provide some theoretical reference for fabricating micro-nano periodic structures and improving the quality of pattern by multi-beam interference lithography technology.

参考文献

[1] CHO K S,MANDAL P,KIM K,et al. Improved efficiency in GaAs solar cells by 1D and 2D nanopatterns fabricated by laser interference lithography［J］. Optics Communications,2011,284(10/11): 2608-2612.

[2] BERENDSEN C W J,SKEREN M,NAJDEK D,et al. Superhydrophobic surface structures in thermoplastic polymers by interference lithography and thermal imprinting［J］. Applied Surface Science,2009,255(23): 9305-9310.

[3] XU D,CHEN K P,OHLINGER K,et al. Nanoimprinting lithography of a two-layer phase mask for three-dimensional photonic structure holographic fabrications via single exposure［J］. Nanotechnology,2011,22(3): 5303-5308.

[4] TRUSKETT V N,MICHAEL P C W. Trends in imprint lithography for biological applications［J］. Trends in Biotechnology,2008,24(7): 312-317.

[5] ZHANG Xin-yu,TANG Qing-le,ZHANG Zhi,et al. DNA microarray plate in quartz glass substrate fabricated by ion beam etching［J］. High Power Laser and Particle Beams,2002,14(1): 129-133.张新宇,汤庆乐,张智,等. 用光刻及离子束刻蚀技术制作DNA芯片模板［J］. 强激光与粒子束,2002,14(1): 129-133.

[6] ZHOU Chang-he. Micro-& nano-optical structures and applications［J］. Laser & Optoelectronics Progress,2009,46(10): 22-27.周常河. 微纳光学结构及应用［J］. 激光与光电子学进展,2009,46(10): 22-27.

[7] LIU Xu,WU Yun-feng,YE Yu-tang,et al. Diffractive characteristics of laser assisted chemical etching GaAs［J］. Journal of Optoelectronics·Laser,2008,773-775.刘旭,吴云峰,叶玉堂,等. 无掩膜激光辅助刻蚀GaAs图形中的衍射条纹分布［J］. 光电子·激光. 2008,773-775.

[8] WATT F,BREESE M B H,BETTIOL A A,et al. Proton beam writing［J］. Materials Today,2007,10(6): 20-29.

[9] XU Hong-bo,LU Nan,QI Dian-peng,et al. Broadband antireflective Si nanopillar arrays produced by nanosphere lithography［J］. Microelectronic Engineering,2009,86(46): 850-852.

[10] DINELLI F,MENOZZI C,BASCHIERI P,et al. Scanning probe nanoimprint lithography［J］. Nanotechnology,2010,21(7): 5305-5310.

[11] ZHANG Jin. Study on laser interferometric lithography［D］. Chengdu: Sichuan University,2003.张锦. 激光干涉光刻技术［D］. 成都: 四川大学,2003.

[12] ADAMS J,TIZAZU G,STEFAN J,et al. Large-area nanopatterning of self-assembled monolayers of alkanethiolates by interferometric lithography ［J］. Langmuir,2010,26(16): 13600-13606.

[13] CHEN Xin,ZHAO Qing,FANG Liang,et al. Farbrication of 100 nm mask by laser interference lithography［J］. High Power Laser and Particle Beams,2011,23(3): 806-810.陈欣,赵青,方亮,等. 激光干涉光刻法制作100 nm掩模［J］. 强激光与粒子束,2011,23(3): 806-810.

[14] JOHANNES D B,NADINE G,WITTEMANN J V,et al. Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching［J］. Nanotechnology,2010,21(9): 95302.

[15] SPALLAS J P,BOYD R D,BRITTEN J A,et al. Fabrication of sub-0.5um diameter cobalt dots on silicon substrates and photoresist pedestals on 50 cm×50 cm glass substrates using laser interference lithograph［J］. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures,1996,14(3): 2005-2007.

[16] HE Feng-tao,ZHOU Qiang,YANG Wen-zheng,et al. Femtosecond laser multi-beam interference lithography antireflective microstructure on silicon surface［J］. Acta Photonica Sinica,2013,42(5): 515-520.贺锋涛,周强,杨文正,等. 飞秒激光多光束干涉光刻硅表面减反微结构［J］. 光子学报,2013,42(5): 515-520.

[17] LI Xiang,PANG Zhao-guang,ZHANG Xin-ping. Fabrication of large-area gold nanowires grating［J］. Acta Photonica Sinica,2011,40(12): 1850-1854. 李响,庞兆广,张新平. 大面积金纳米线光栅的制备［J］. 光子学报,2011,40(12): 1850-1854.

[18] ZHANG Jin,FENG Bo-ru,GUO Yong-kang. Theoretical analysis for fabricating nanometer hole array with 4 laser beams interference lithography［J］. Acta Photonica Sinica,2003,32(4): 398-401.张锦,冯伯儒,郭永康. 四激光束干涉光刻制造纳米级孔阵的理论分析［J］. 光子学报,2003,32(4): 398-401.

[19] ZHANG Wei,LIU Wei-ping,GU Xiao-yong,et al. Multi-beam laser interference lithography pattern［J］. High Power Laser and Particle Beams,2011,23(12): 3157-3162.张伟,刘维萍,顾小勇,等. 多光束激光干涉光刻图样［J］. 强激光与粒子束,2011,23(12): 3157-3162.

[20] DAI Long-gui,XUAN Ming-dong,DING Peng,et al. A simple and efficient method for preparing silicon nanopit arrays［J］. Acta Physica Sinica,2013,62(15): 156104.戴隆贵,禤铭东,丁芃,等.一种简单高效的制备硅纳米孔阵结构的方法［J］. 物理学报,2013,62(15):156104.

[21] FENG Bo-ru,ZHANG Jin,GUO Yong-kang. Implementation methods for wave-front division in maskless laser interference photolithography［J］. Opto-Electronic Engineering,2004,31(2): 8-10.冯伯儒,张锦,郭永康. 波前分割无掩模激光干涉光刻的实现方法［J］. 光电工程,2004,31(2): 8-10.

[22] XU Jia,WANG Zuo-bin,WENG Zhan-kun,et al. Laser interference nanolithography with a 405nm fiber semiconductor laser［J］. Key Engineering Materials,2013,552: 262-267.

[23] KIM T U,KIM J A,PAWAR S M,et al. Creation of nanoscale two-dimensional patterns of ZnO nanorods using laser interference lithography followed by hydrothermal synthesis at 90℃［J］. Crystal Growth & Design,2010,10: 4256.

[24] ZHANG Jin,FENG Bo-ru,GUO Yong-kang. Implementation methods for amplitude division maskless laser interference photolithography［J］. Opto-Electronic Engineering,2004,31(2): 11-15.张锦,冯伯儒,郭永康. 振幅分割无掩膜激光干涉光刻的实现方法［J］. 光电工程,2004,31(2): 11-15.

马丽娜, 张锦, 蒋世磊, 孙国斌, 杨国锋, 杭凌侠, 弥谦, 计玮. 入射光束角度及强度偏差对多光束干涉光刻结果的影响[J]. 光子学报, 2015, 44(10): 1011003. MA Li-na, ZHANG Jin, JIANG Shi-lei, SUN Guo-bin, YANG Guo-feng, HANG Ling-xia, MI Qian, JI Wei. Influence on Patterns Quality of Multi-beam Interference Lithography Caused by the Deviations of Incidence Azimuth Angle and Intensity of Light[J]. ACTA PHOTONICA SINICA, 2015, 44(10): 1011003.

入射光束角度及强度偏差对多光束干涉光刻结果的影响

关于本站 Cookie 的使用提示

全站搜索

入射光束角度及强度偏差对多光束干涉光刻结果的影响

相关论文

相关资讯

关于本站 Cookie 的使用提示

全站搜索