不同退火温度下金属/4H-SiC Schottky势垒高度的研究
杨克勤, 陈厦平, 杨伟锋, 孔令民, 蔡加法, 林雪娇, 吴正云. 不同退火温度下金属/4H-SiC Schottky势垒高度的研究[J]. 量子电子学报, 2005, 22(2): 251.
杨克勤, 陈厦平, 杨伟锋, 孔令民, 蔡加法, 林雪娇, 吴正云. Study on Schottky barrier of 4H-SiC at different anealing temperature[J]. Chinese Journal of Quantum Electronics, 2005, 22(2): 251.
[1] Hao Y, et al. Wide Band Semiconductor Techniques of SiC (碳化硅宽带隙半导体技术) [M]. Science Press, 2000. 1-3(in Chinese).
[2] . High voltage 4H-SiC Schottky barrier diodes[J]. IEEE Electron Devices Lett., 1995, 16: 226.
[3] . High performance of high-voltage 4H-SiC Schottky barrier diodes[J]. IEEE Electron Devices Lett., 1995, 16: 280.
[4] . 4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz[J]. IEEE Electron Devices Lett., 1994, 15: 406.
[5] . Analysis of schottky barrier heights of metal/SiC contacts and its possible application to high-voltage rectifying devices[J]. Phys. Status. Solidi (A), 1997, 162: 389.
[6] . Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers[J]. IEEE Trans. Electron Devices, 1998, 45: 1595.
[7] . High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination[J]. IEEE Trans Electron Devices, 1999, 46: 456.
[8] Alok D, et al. Effect of surface preparation and thermal anneal on electrical characteristics of 4H-SiC Schottky barrier diodes [J]. Mater. Sci, Forum., 1998, 264-268: 929.
[9] Kestle A, et al. Improved Ni/SiC Schottky diode formation [J]. Electronics Lett., 200, 36: 267.
[10] SZE S.M, Physics of Semiconductor Devices[M].John Wiley & Sons,Inc, 1969. 225-242.
[11] Hatayama T, et al. Electrical properties and interface reaction of annealed Cu/4H-SiC Schottky rectifiers [J].Materials Science Forum, 2002, 389-393: 925-928.
[12] . Influence of annealing on reverse current of 4H-SiC Schottky diodes[J]. Diamond and Related Materials, 2002, 11: 1263-1267.
[13] . Contact formation in SiC devices[J]. Applied Surface Science, 2001, 184: 287-294.
[14] . The work function of the elements and its periodicity[J]. J. of Appl. Phys., 1977, 48(11): 4729-4733.
杨克勤, 陈厦平, 杨伟锋, 孔令民, 蔡加法, 林雪娇, 吴正云. 不同退火温度下金属/4H-SiC Schottky势垒高度的研究[J]. 量子电子学报, 2005, 22(2): 251. 杨克勤, 陈厦平, 杨伟锋, 孔令民, 蔡加法, 林雪娇, 吴正云. Study on Schottky barrier of 4H-SiC at different anealing temperature[J]. Chinese Journal of Quantum Electronics, 2005, 22(2): 251.
PDF全文
