不同退火温度下金属/4H-SiC Schottky势垒高度的研究

杨克勤; 陈厦平; 杨伟锋; 孔令民; 蔡加法; 林雪娇; 吴正云

量子电子学报, 2005, 22 (2): 251, 网络出版: 2006-05-15

不同退火温度下金属/4H-SiC Schottky势垒高度的研究

Study on Schottky barrier of 4H-SiC at different anealing temperature

论文大纲

杨克勤 ^1,*陈厦平 ¹杨伟锋 ¹孔令民 ¹蔡加法 ¹林雪娇 ¹吴正云 ^1,2

作者单位

¹ 厦门大学物理系,福建,厦门,361005

² 厦门大学萨本栋微机电中心,福建,厦门,361005

光电子学 Schottky势垒高度退火 optoelectronics 4H-SiC 4H-SiC Schottky barrier height annealing

摘要

采用磁控溅射的方法在4H-SiC样品上分别沉积四种金属薄膜(Ag,Cu,Ni,Cr)形成Schottky接触,研究了不同温度退火对Schottky势垒高度的影响.通过对样品的I-V测试结果的拟合,得到各金属/4H-SiC Schottky接触的势垒高度以及理想因子.在反向偏压100V下,样品的反向漏电流小于10-10A,说明样品的反向特性良好.样品经过不同温度的退火后,发现Cu、Ni与4H-SiC的势垒高度(SBH)随退火温度的升高而提高,超过某一温度,其整流特性变差;Ag、Cr的SBH在退火后降低.SBH与金属功函数呈线性关系(Cr金属除外),斜率为0.11.

Abstract

Schottky barriers were formed by sputtering the metals on the front side of 4H-SiC(Si face) by magnetron sputtering to study the rectifying characteristics of the contacts between the metals and 4H-SiC. The infections of the annealing under different temperature were also studied. Schottky barrier height (SBH) of metal/4H-SiC was evaluated from I-V measurements. Under a reverse voltage about 100 V, the reverse leaky current is below 0.1 nA. After annealed, the SBH of Cu/, Ni/4H-SiC was increased, but the SBH of Cr/, Ag/4H-SiC contact was decreased. The relationship between the work function of metals and the SBH was presented. The barrier height depends on the metal work function with slopes of 0.1 to 0.2 (except metal Cr).

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杨克勤, 陈厦平, 杨伟锋, 孔令民, 蔡加法, 林雪娇, 吴正云. 不同退火温度下金属/4H-SiC Schottky势垒高度的研究[J]. 量子电子学报, 2005, 22(2): 251. 杨克勤, 陈厦平, 杨伟锋, 孔令民, 蔡加法, 林雪娇, 吴正云. Study on Schottky barrier of 4H-SiC at different anealing temperature[J]. Chinese Journal of Quantum Electronics, 2005, 22(2): 251.

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