磁控共溅射制备Si掺杂Al薄膜的应力研究 
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Study on Stress in Si-Doped Al Thin Films Prepared by Magnetron Co-Sputtering
1 同济大学物理科学与工程学院, 上海 200092
2 中国科学院上海光学精密机械研究所薄膜光学实验室, 上海 201800
3 中国科学院强激光材料重点实验室, 上海 201800
图 & 表
图 1. 应力测量示意图
Fig. 1. Schematic of stress measurement
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图 2. ω和2θ的示意图
Fig. 2. Schematic of ω and 2θ
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图 3. Si掺杂质量分数为50%的Al-Si复合薄膜的Al膜、Si膜的XRR测试和拟合曲线。(a)Al膜;(b)Si膜
Fig. 3. XRR test and fitting curves of Al and Si for Si-doped 50% (mass fraction) Al-Si composite film. (a) Al film; (b) Si film
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图 4. Al-Si复合薄膜的曲率
Fig. 4. Curvature for Al-Si composite films
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图 5. Al-Si复合薄膜的应力
Fig. 5. Stress for Al-Si composite films
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图 6. Al-Si复合薄膜的X射线衍射图
Fig. 6. X-ray diffraction patterns of Al-Si composite films
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表 1Al-Si复合薄膜的Al膜、Si膜的XRR拟合结果
Table1. XRR fitting results of Al and Si films in Al-Si composite film
| Designed Si-doped mass fraction /% | Al thickness /nm | Si thickness /nm | Measured Si-doped mass fraction /% |
|---|
| 0 | 28.31 | - | 0 | | 10 | 27.34 | 3.12 | 8.97 | | 20 | 25.43 | 5.82 | 16.49 | | 30 | 20.35 | 9.38 | 28.46 | | 50 | 15.27 | 14.91 | 45.73 |
|
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表 2Al-Si复合薄膜的应力值
Table2. Stress of Al-Si composite films
| Si-doped mass fraction /% | Stress /MPa |
|---|
| 0 | -47.98 | | 8.97 | -35.91 | | 16.49 | -19.34 | | 28.46 | 54.29 | | 45.73 | 83.84 |
|
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表 3Al-Si复合薄膜的晶向、衍射峰位和晶粒大小
Table3. Crystal orientation, diffraction peak position and grain size of Al-Si composite films
| Si-doped mass fraction /% | Crystal orientation | Diffraction peak position /(°) | Grain size /nm |
|---|
| 0 | Al(111) | 38.88 | 24.6 | | 8.97 | Al(111) | 38.89 | 18.1 | | 16.49 | Al(111) | 38.85 | 11.5 | | 28.46 | Al(111) | 38.76 | 9.0 | | 45.73 | Al(111) | 38.63 | 3.7 |
|
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朱京涛, 周涛, 朱杰, 赵娇玲, 朱航宇. 磁控共溅射制备Si掺杂Al薄膜的应力研究[J]. 光学学报, 2020, 40(14): 1431002. Jingtao Zhu, Tao Zhou, Jie Zhu, Jiaoling Zhao, Hangyu Zhu. Study on Stress in Si-Doped Al Thin Films Prepared by Magnetron Co-Sputtering[J]. Acta Optica Sinica, 2020, 40(14): 1431002.
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