量子电子学报, 2005, 22 (1): 81, 网络出版: 2006-05-15
应变InGaAs/GaAs量子阱MOCVD生长优化及其在980 nm半导体激光器中的应用
Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD
引用该论文
俞波, 盖红星, 韩军, 邓军, 邢艳辉, 李建军, 廉鹏, 邹德恕, 沈光地. 应变InGaAs/GaAs量子阱MOCVD生长优化及其在980 nm半导体激光器中的应用[J]. 量子电子学报, 2005, 22(1): 81.
俞波, 盖红星, 韩军, 邓军, 邢艳辉, 李建军, 廉鹏, 邹德恕, 沈光地. Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 81.
俞波, 盖红星, 韩军, 邓军, 邢艳辉, 李建军, 廉鹏, 邹德恕, 沈光地. 应变InGaAs/GaAs量子阱MOCVD生长优化及其在980 nm半导体激光器中的应用[J]. 量子电子学报, 2005, 22(1): 81. 俞波, 盖红星, 韩军, 邓军, 邢艳辉, 李建军, 廉鹏, 邹德恕, 沈光地. Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 81.