应变InGaAs/GaAs量子阱MOCVD生长优化及其在980 nm半导体激光器中的应用
俞波, 盖红星, 韩军, 邓军, 邢艳辉, 李建军, 廉鹏, 邹德恕, 沈光地. 应变InGaAs/GaAs量子阱MOCVD生长优化及其在980 nm半导体激光器中的应用[J]. 量子电子学报, 2005, 22(1): 81.
俞波, 盖红星, 韩军, 邓军, 邢艳辉, 李建军, 廉鹏, 邹德恕, 沈光地. Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 81.
[1] . New materials for diode laser pumping of solid-state lasers[J]. IEEE Journal of Quantum Electronics, 1992, 28(4): 942.
[2] . Reliability aspects of 980 nm pump lasers in EDFA applications[J]. Proc. of SPIE, 1998, 3284: 20-27.
[3] . Growth and fabrication of high-performance 980 nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers[J]. IEEE Journal of Quantum Electronics, 1994, 30(2): 424-440.
[4] . Effect of coherency strain and misfit dislocations on the mode of growth of thin films[J]. Thin Solid Films, 1975, 26(1): 129-134.
[5] Snyder C W, Orr B G, et al. Hydrogen complexes and their vibrations in undoped crystalline silicon [J]. Phys.Rev. Lett., 1991, (66): 253-258.
[6] . Effect of surface quality on overgrowth of highly strained GaInAs/GaAs quantum wells and improvement by a strained buffer layer[J]. Jpn. J. Appl. Phys., 1999, 38(9): 5023-5027.
俞波, 盖红星, 韩军, 邓军, 邢艳辉, 李建军, 廉鹏, 邹德恕, 沈光地. 应变InGaAs/GaAs量子阱MOCVD生长优化及其在980 nm半导体激光器中的应用[J]. 量子电子学报, 2005, 22(1): 81. 俞波, 盖红星, 韩军, 邓军, 邢艳辉, 李建军, 廉鹏, 邹德恕, 沈光地. Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 81.
PDF全文
