强激光与粒子束, 2007, 19 (8): 1377, 网络出版: 2008-02-18  

用反差确定电子束曝光剂量与刻蚀深度的关系

Determining relationship between electron-beam dose and etching depth by empirical formula of contrast
作者单位
1 山东大学,控制学院,电子束研究所,济南,250061
2 山东科技大学,信息与电气工程学院,山东,青岛,266510
3 东营职业学院,山东,东营,257091
摘要
为了精确地确定电子束曝光剂量与刻蚀深度间的关系,根据抗蚀剂的灵敏度曲线,采用反差经验公式来确定剂量与刻蚀深度间的关系.选用正性抗蚀剂PMMA进行曝光实验,将计算值进行曲线拟合,得到的关系曲线与实验结果基本相符.当剂量在20~35 μC/cm2间时,实验值与计算值间的差值最小,说明当剂量在此范围内时该方法能够更加精确地确定剂量与刻蚀深度间的关系.采用该方法节省了实验时间,提高了刻蚀效率.
Abstract
参考文献

[1] Men Z W,Mohr J,Paul O.微系统技术[M].北京:化学工业出版社,2003:197-354.(Men Z W,Mohr J,Paul O.Microsystem Techno-logy.Beijing:Chemical Industry Press,2003:197-354)

[2] 孔祥东,张玉林,魏守水.基于电子束光刻的LIGA技术研究[J].微细加工技术,2004,(1):18-22.(Kong X D,Zhang Y L,Wei S S.Study of LIGA based on electron beams.Microfabrication Technology,2004,(1):18-22)

[3] Ikuta K,Maruo S,Kojima S.New micro stereo lithography for freely movable 3D micro structure-super IH process with submicron resolution[C]//Proc of IEEE.1998:290-295.

[4] Brünger W,Kley E B,Schnabel B,et al.Low energy lithography:energy control and variable energy exposure[J].Microelectronic Engineering,1995,27:135-138.

[5] 孔祥东,冯圣玉,卢文娟,等.电子束重复增量扫描曝光技术[J].强激光与粒子束,2007,19(3):503-506.(Kong X D,Feng S Y,Lu W J,et al.Electron beam lithography based on overlapped increment scanning.High Power Laser and Particle Beams,2007,19(3):503-506)

[6] 席德勋.一种新的电子束扫描电流产生方法[J].强激光与粒子束,2001,13(1):113-116.(Xi D X.A new current generating method for electron beam scan.High Power Laser and Particle Beams,2001,13(1):113-116)

[7] Stemmer A,Zarschizky H,Knapek E,et al.Efficiency enhancement of diffractive optical elements by variable relief profiling[J].Microelectronic Engineering,1995,27(1-4):171-174.

[8] Bogdanov A L,Holmqvist T,Jedrasik P,et al.Dual pass electron beam writing of bit arrays with sub-100 nm bits on imprint lithography masters for patterned media production[J].Microelectronic Engineering,2003,67-68:381-389.

[9] 卢文娟,张玉林,孔祥东.电子束能量、剂量对固化厚度影响的研究[J].微细加工技术,2005,(4):7-11,64.(Lu W J,Zhang Y L,Kong X D.Study of effect of electron beam energy and dose on curing depth of liquid resists.Microfabrication Technology,2005,(4):7-11,64)

[10] Chang T H P.Proximity effect in electron-beam lithography[J].J Vac Sci Technol,1975,12(6):1271-1275.

[11] 蒋欣荣.微细加工技术[M].北京:电子工业出版社,1990:46-57.(Jiang X R.Microfabrication technology.Beijing:Electronics Industry Press,1990:46-57)

[12] Greeneich J S,Van Duzer T.An exposure model for electron-sensitive resists[J].IEEE Trans Electron Devices,1974,21(5):286-299.

卢文娟, 张玉林, 孔祥东, 郝慧娟. 用反差确定电子束曝光剂量与刻蚀深度的关系[J]. 强激光与粒子束, 2007, 19(8): 1377. 卢文娟, 张玉林, 孔祥东, 郝慧娟. Determining relationship between electron-beam dose and etching depth by empirical formula of contrast[J]. High Power Laser and Particle Beams, 2007, 19(8): 1377.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!