光子学报, 2020, 49 (6): 0604002, 网络出版: 2020-11-26
基于感光栅极GaN高迁移率晶体管的新型探测器制备与优化 下载: 518次
Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices
基本信息
DOI: | 10.3788/gzxb20204906.0604002 |
中图分类号: | O472.3 |
栏目: | 探测器 |
项目基金: | National High Technology Research and Development Program of China (No.2015AA033305), National Key Reserach and Development Program of China (Nos.2017YFB0402800, 2017YFB0402803) |
收稿日期: | 2019-12-16 |
修改稿日期: | -- |
网络出版日期: | 2020-11-26 |
通讯作者: | 朱彦旭 (zhuyx@bjut.edu.cn), 朱彦旭 (zhuyx@bjut.edu.cn) |
备注: | -- |
朱彦旭, 朱彦旭, 杨壮, 宋会会, 李赉龙, 杨忠, 李锜轩, 胡铁凡. 基于感光栅极GaN高迁移率晶体管的新型探测器制备与优化[J]. 光子学报, 2020, 49(6): 0604002. Yan-xu ZHU, Yan-xu ZHU, Zhuang YANG, Hui-hui SONG, Lai-long LI, Zhong YANG, Qi-xuan LI, Tie-fan HU. Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices[J]. ACTA PHOTONICA SINICA, 2020, 49(6): 0604002.