基于感光栅极GaN高迁移率晶体管的新型探测器制备与优化

朱彦旭; 朱彦旭; 杨壮; 宋会会; 李赉龙; 杨忠; 李锜轩; 胡铁凡

doi:doi:10.3788/gzxb20204906.0604002

光子学报, 2020, 49 (6): 0604002, 网络出版: 2020-11-26

基于感光栅极GaN高迁移率晶体管的新型探测器制备与优化下载： 518次

Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices

朱彦旭 ^*朱彦旭 ^*杨壮宋会会李赉龙杨忠李锜轩胡铁凡

作者单位

北京工业大学光电子技术教育部重点实验室, 北京 100124

引用该论文

朱彦旭, 朱彦旭, 杨壮, 宋会会, 李赉龙, 杨忠, 李锜轩, 胡铁凡. 基于感光栅极GaN高迁移率晶体管的新型探测器制备与优化[J]. 光子学报, 2020, 49(6): 0604002.

Yan-xu ZHU, Yan-xu ZHU, Zhuang YANG, Hui-hui SONG, Lai-long LI, Zhong YANG, Qi-xuan LI, Tie-fan HU. Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices[J]. ACTA PHOTONICA SINICA, 2020, 49(6): 0604002.

参考文献

[1] ZHANG Xi-sheng, YAN Chun-yu, WU Ti-hui. Fabrication of CsPbBrI₂ quantum dots and its photodetector performance[J]. Acta Photonica Sinica, 2020, 49(1): 123002.

[2] NANVER L, QI Lin, MOHAMMADI V. Robust UV/VUV/EUV pureB photodiode detector technology with High CMOS compatibility[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20(6): 306-316.

[3] YANG Zhen-qian, DENG Yu-hao, , . High-performance single-crystalline perovskite thin-film photodetector[J]. Advanced Materials, 2018, 30(8): 1704333.

[4] AMBACHER O, FOUTZ B, SMART J. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures[J]. Journal of Applied Physics, 2000, 87(1): 334-344.

[5] CLAIRE G, HOCK M N, GEORGE CHU S N. Intersubband absorption at λ1.55μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers[J]. Applied Physics Letters, 2000, 77(23): 3722-3724.

[6] ZHU J, ZHOU X, JING L. Piezotronic effect modulated flexible AlGaN/GaN high-electron-mobility transistors[J]. ACS Nano, 2019, 13(11): 13161-13168.

[7] CHEN C C, CHEN H I, LIU I P. Enhancement of hydrogen sensing performance of a GaN-based Schottky diode with a hydrogen peroxide surface treatment[J]. Sensors and Actuators B:Chemical, 2015, 211: 303-309.

[8] LI Jin-lun, CUI Shao-hui, ZHANG Jing. Research of InP-based room temperature HEMT terahertz detector enhanced by butterfly antenna[J]. Infrared and Laser Engineering, 2019, 48(9): 131-138.

[9] KHAN F, KHAN W, KIM S D. High-performance ultraviolet light detection using nano-scale-fin isolation AlGaN/GaN heterostructures with ZnO nanorods[J]. Nanomaterials, 2019, 9(3): 9030440.

[10] HU Zhi-jun, TIAN Ming-wen, NYSTEN B. Regular arrays of highly ordered ferroelectric polymer nanostructures for non-volatile low-voltage memories[J]. Nature Materials, 2008, 8(1): 62-67.

[11] BUTLER K T, FROST J M, WALSH A. Ferroelectric materials for solar energy conversion:photoferroics revisited[J]. Energy & Environmental Science, 2015, 8(3): 838-848.

[12] CAI Tian-yi, JU Sheng. Photovoltaic effect in ferroelectrics[J]. Acta Physica Sinica, 2018, 67(15): 157081.

[13] HAMATANI T, SHIRAHATA Y, OHISHI Y. Arsenic and chlorine co-doping to CH3NH3PbI3 perovskite solar cells[J]. Advances in Materials Physics and Chemistry, 2017, 7(1): 1-10.

[14] ZENKEVICH A V, MATVEYEV Yu, MAKSIMOVA K. Giant bulk photovoltaic effect in thin ferroelectric BaTiO₃ films[J]. Physical Review B, 2014, 90(16): 161409.

[15] LI Xiong, YI Chen-yi, LUO Jing-shan. Improved performance and stability of perovskite solar cells by crystal crosslinking with alkylphosphonic acid ω -ammonium chlorides[J]. Nature Chemistry, 2015, 7(9): 703-711.

[16] LEE Chun-hsun, LIN Wei-ren, LEE Yu-hsuan. Characterizations of enhancement-mode double heterostructure GaN HEMTs with gate field plates[J]. IEEE Transactions on Electron Devices, 2018, 65(2): 488-492.

[17] TAKAYUKI T, MASAKI M, TAKAYUKI K. Fabrication of L10-FeNi phase by sputtering with rapid thermal annealing[J]. Journal of Alloys & Compounds, 2018, 750: 164-170.

[18] ZHENG Fen-gang, CHEN Jian-ping, LI Xin-wan. Improved dielectric and ferroelectric characteristics of highly (111)-oriented Pb(Zr0.52Ti0.48)O3 films produced by Sol-Gel method[J]. Acta Physica Sinica, 2006, 55(6): 3076-3072.

[19] SUN Ke-xue, ZHANG Shu-yi, SHUI Xiu-ji. Experimental and numerical study on transverse piezoelectricity of x BiInO 3-(1-x)PbTiO₃ films by multilayer cantilevers[J]. Japanese Journal of Applied Physics, 2018, 57(2): 025801.

[20] SUN En-wei, ZHANG Rui, ZHAO Xin. Electro-optic properties of relaxor ferroelectric 0.93Pb(Zn_1/3Nb_2/3)O₃-0.07PbTiO₃ single crystal[J]. Acta Photonica Sinica, 2009, 38(6): 1442-1445.

[21] QIAO Hong, YUAN Jian, XU Zai-quan. Broadband photodetectors based on graphene-Bi₂Te₃ heterostructure[J]. ACS Nano, 2015, 9(2): 1886-1894.

[22] PARK P S, RAJAN S. Simulation of short-channel effects in N-and Ga-Polar AlGaN/GaN HEMTs[J]. IEEE Transactions on Electron Devices, 2011, 58(3): 704-708.

朱彦旭, 朱彦旭, 杨壮, 宋会会, 李赉龙, 杨忠, 李锜轩, 胡铁凡. 基于感光栅极GaN高迁移率晶体管的新型探测器制备与优化[J]. 光子学报, 2020, 49(6): 0604002. Yan-xu ZHU, Yan-xu ZHU, Zhuang YANG, Hui-hui SONG, Lai-long LI, Zhong YANG, Qi-xuan LI, Tie-fan HU. Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices[J]. ACTA PHOTONICA SINICA, 2020, 49(6): 0604002.

基于感光栅极GaN高迁移率晶体管的新型探测器制备与优化下载： 518次

关于本站 Cookie 的使用提示

全站搜索

基于感光栅极GaN高迁移率晶体管的新型探测器制备与优化 下载： 518次

相关论文

相关资讯

关于本站 Cookie 的使用提示

全站搜索

基于感光栅极GaN高迁移率晶体管的新型探测器制备与优化下载： 518次