光子学报, 2020, 49 (6): 0604002, 网络出版: 2020-11-26
基于感光栅极GaN高迁移率晶体管的新型探测器制备与优化 下载: 518次
Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices
补充材料
朱彦旭, 朱彦旭, 杨壮, 宋会会, 李赉龙, 杨忠, 李锜轩, 胡铁凡. 基于感光栅极GaN高迁移率晶体管的新型探测器制备与优化[J]. 光子学报, 2020, 49(6): 0604002. Yan-xu ZHU, Yan-xu ZHU, Zhuang YANG, Hui-hui SONG, Lai-long LI, Zhong YANG, Qi-xuan LI, Tie-fan HU. Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices[J]. ACTA PHOTONICA SINICA, 2020, 49(6): 0604002.