液晶与显示, 2016, 31 (8): 773, 网络出版: 2016-10-24
利用CsN3n型掺杂电子传输层改善OLED器件性能的研究
Improved properties of organic light-emitting devices by utilizing CsN3 n-type doped electron transport layer
引用该论文
于瑶瑶, 陈星明, 金玉, 吴志军, 陈燕. 利用CsN3n型掺杂电子传输层改善OLED器件性能的研究[J]. 液晶与显示, 2016, 31(8): 773.
YU Yao-yao, CHEN Xing-ming, JIN Yu, WU Zhi-jun, CHEN Yan. Improved properties of organic light-emitting devices by utilizing CsN3 n-type doped electron transport layer[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(8): 773.
于瑶瑶, 陈星明, 金玉, 吴志军, 陈燕. 利用CsN3n型掺杂电子传输层改善OLED器件性能的研究[J]. 液晶与显示, 2016, 31(8): 773. YU Yao-yao, CHEN Xing-ming, JIN Yu, WU Zhi-jun, CHEN Yan. Improved properties of organic light-emitting devices by utilizing CsN3 n-type doped electron transport layer[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(8): 773.