静电放电对GaN基功率型LED老化特性的影响
[1] 周舟, 冯世维, 张光沉 等. GaN基大功率白光LED的高温老化特性[J]. 发光学报, 2011, 32(10): 1046~1050
[2] 吴海彬, 王昌铃. 白光LED封装材料对其光衰影响的实验研究[J]. 光学学报, 2005, 25(8): 1091~1094
[3] 苏丽伟, 游达, 程海英 等. Si衬底功率型GaN基绿光LED性能[J]. 光学学报, 2009, 29(4): 1066~1069
[4] M. Meneghini, L.-R. Trevisanello, G. Meneghesso et al.. A review on the reliability of GaN-based LEDs[J]. IEEE Trans. Device and Materials Reliability, 2008, 8(2): 323~330
[5] M. Meneghini, A. Tazzoli, G. Mura et al.. A review on the physical mechanisms that limit the reliability of GaN-based LEDs[J]. IEEE Trans. Electron Devices, 2010, 57(1): 108~118
[6] S. Buso, G. Spiazzi, M. Meneghini et al.. Performance degradation of high brightness light emitting diodes under DC and pulsed bias[J]. IEEE Trans. Device and Materials Reliability, 2008, 8(2): 312~322
[7] M. Meneghini, L. Rigutti, L. Trevisanello et al.. A model for the thermal degradation of metal/(p-GaN) interface in GaN-based LEDs[J]. J. Appl. Phys., 2008, 103(6): 7031~7037
[8] T. Yu, S. Shang, Z. Chen et al.. Luminescence degradation of InGaN/GaN violet LEDs[J]. J. Lumin., 2007, 122-123: 696~699
[9] C. H. Jang, J. K. Sheu, S. J. Chang et al.. Effect of growth pressure of undoped GaN layer on the ESD characteristics of GaN-based LEDs grown on patterned sapphire[J]. IEEE Photon. Technol. Lett., 2011, 23(14): 968~970
[10] P. C. Tsai, W. R. Chen, Y. K. Sua. Enhanced ESD properties of GaN-based light-emitting diodes with various MOS capacitor designs[J]. Superlattices and Microstructures, 2010, 48(1): 23~30
[11] C. H. Jang, J. K. Sheu, C. M. Tsai et al.. Effect of thickness of the p-AlGaN electron blocking layer on the improvement of ESD characteristics in GaN-based LEDs[J]. IEEE Photon. Technol. Lett., 2008, 20(13): 1142~1144
[12] C. M. Tsai, J. K. Sheu, P. T. Wang et al.. High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD[J]. IEEE Photon. Technol. Lett., 2006, 18(11): 1213~1215
[13] 乐淑萍, 易江林, 肖慧荣 等. 蓝宝石衬底GaN基白光LED静电老化特性[J]. 功能材料与器件学报, 2008, 14(3): 712~716
Le Shuping, Yi Jianglin, Xiao Huirong et al.. Influence of ESD on aging of GaN/Al2O3 white LEDs[J]. J. Functional Materials and Devices, 2008, 14(3): 712~716
[14] 高光渤, 李学信. 半导体器件可靠性物理[M]. 北京:科学出版社, 1987. 458~465
Gao Guangbo, Li Xuexin. Reliability Physics of Semiconductor Device[M]. Beijing: Science Press, 1987. 458~465
[15] X. A. Cao, P. M. Sandvik, S. F. LeBoeuf et al.. Defect generation in InGaN GaN light-emitting diodes under forward and reverse electrical stresses[J]. Microelectronics Reliability, 2003, 43(12): 1987~1991
[16] 崔德胜, 郭伟玲, 崔碧峰 等. 人体模式静电放电对GaN基大功率发光二极管特性的影响[J]. 光学学报, 2011, 31(3): 0323004
[17] Matteo Meneghini, Augusto Tazzoli, Enrico Ranzato. A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events[C]. 2010 IEEE International Reliability Physics Symposium, 2010, 522~527
[18] A. G. Milnes, D. L. Feucht. Heterojunctions and Metal-Semiconductor Junctions[M]. New York: Academic, 1973. 42~43
[19] N. Narendran, Y. Gu. Life of LED-based white light sources[J]. J. Display Technol., 2005, 1(1): 167~171
李伟国, 崔碧峰, 郭伟玲, 崔德胜, 徐昕伟. 静电放电对GaN基功率型LED老化特性的影响[J]. 光学学报, 2012, 32(8): 0823006. Li Weiguo, Cui Bifeng, Guo Weiling, Cui Desheng, Xu Xinwei. Effect of Electrostatic-Discharge on the Aging Characteristics of GaN Based Power LED[J]. Acta Optica Sinica, 2012, 32(8): 0823006.