基于发光二极管的显示技术在电视、电脑、手机等终端产品上获得了广泛应用。与传统液晶显示器和有机发光二极管屏幕相比，微型发光二极管（Micro-LED）显示器件在尺寸、性能、功耗、使用寿命等方面均具有显著优势。总结了Micro-LED全彩色显示的技术类别和产品应用场景，综述了实现Micro-LED全彩色显示的最新研究进展，包括巨量转移技术、色转换层集成技术和外延芯片单片集成技术，并进一步比较分析这些技术的优缺点，展望了Micro-LED全彩色显示技术的未来发展。

界面工程是提高光电探测器性能的有效方法之一。报道了基于界面工程调控的石墨烯（Gr，2D）/GaN（3D）范德瓦耳斯异质结紫外光电探测器。GaN吸收光子产生电子空穴对，并在内建电场作用下发生分离。其中，光生空穴利用隧穿效应向Gr一侧迁移，而光生电子向GaN一侧迁移。在较高的电场驱动下，载流子将发生碰撞，造成光电流倍增，使得器件的光吸收效率与光电转化效率有明显提升。因此，器件在-2 V偏压条件和5 μW/cm²紫外光照射下，展示出较高的响应度（395.2 A/W）和较大的探测率（4.425×10¹⁵ Jones）值。该研究丰富了界面工程技术在Gr基紫外光电探测器的应用，为制备高性能紫外探测器提供了可能。

太赫兹技术被称为“改变未来世界十大技术之一”，对基础科学研究、国民经济发展和**建设具有重要意义，尤其在未来 6G通信方面举足轻重。太赫兹波源是整个太赫兹技术研究的基础，也是太赫兹应用系统的核心部件。近年来，共振隧穿二极管 (RTD)型太赫兹波源因体积小，质量轻，易于集成，室温工作，功耗低等特点受到广泛关注，为太赫兹波推广应用开辟了新的途径。通过文献分析，本文从器件材料技术、主要工艺及器件性能等方面对 InP基与 GaN基 RTD太赫兹振荡器的发展进行评述，并探讨了 InP基与 GaN基 RTD太赫兹振荡器件的研究方向。

使用波长248 nm的准分子激光器实现了GaN基微型发光二极管(Micro LED)的大面积激光剥离(LLO)。分离器件所需要的临界激光能量密度为800~835 mJ·cm-2, 分离的器件完好无损, 分离表面光滑, 残余应力为0.071 4 GPa, 均方根粗糙度仅为0.597 nm, 远低于目前报道的LLO方法分离表面。该研究为实现高质量、高效率的GaN基Micro LED芯片的制备提供了一种有前景的思路, 对柔性GaN基器件的制备具有一定意义。

宽禁带氮化镓(GaN)材料以其独特的性质和应用前景成为国内外研究的热点，高质量GaN单晶衬底的制备是获得性能优异的光电子器件和功率器件的基础。钠助熔剂法生长条件温和，易获得高质量、大尺寸的GaN单晶，是一种具有广阔商业化前景的GaN单晶生长方法。钠助熔剂法自20世纪90年代末期被发明以来，经过20多年的发展，钠助熔剂法生长的晶体在尺寸与质量上都取得了长足的进步。本文从晶体生长原理和关键工艺(籽晶选择、温度梯度以及添加剂)等方面综述了钠助熔剂法生长GaN单晶研究进展，并对其面临的挑战和未来发展趋势进行了展望。

Gallium nitride (GaN) has widespread applications in the semiconductor industry because of its desirable optoelectronic properties. The fabrication of surface structures on GaN thin films can effectively modify their optical and electrical properties, providing additional degrees of freedom for controlling GaN-based devices. Compared with lithography-based techniques, laser processing is maskless and much more efficient. This paper shows how surface micro-nano structures can be produced on GaN thin films using 355 nm nanosecond laser irradiation. The effects of the laser pulse energy, number of pulses, and polarization direction were studied. It was found that distinct micro-nano structures were formed under different irradiation conditions, and their geometries and elemental compositions were analyzed. The results indicate that different types of surface micro-nano structures can be produced on GaN thin films in a controllable manner using 355 nm nanosecond laser irradiation. The results of our study provide valuable guidance for the surface modification of GaN-based optoelectronic devices.Gallium nitride (GaN) has widespread applications in the semiconductor industry because of its desirable optoelectronic properties. The fabrication of surface structures on GaN thin films can effectively modify their optical and electrical properties, providing additional degrees of freedom for controlling GaN-based devices. Compared with lithography-based techniques, laser processing is maskless and much more efficient. This paper shows how surface micro-nano structures can be produced on GaN thin films using 355 nm nanosecond laser irradiation. The effects of the laser pulse energy, number of pulses, and polarization direction were studied. It was found that distinct micro-nano structures were formed under different irradiation conditions, and their geometries and elemental compositions were analyzed. The results indicate that different types of surface micro-nano structures can be produced on GaN thin films in a controllable manner using 355 nm nanosecond laser irradiation. The results of our study provide valuable guidance for the surface modification of GaN-based optoelectronic devices.