发光学报, 2014, 35 (4): 399, 网络出版: 2014-05-08   

通过交替生长气氛调控N掺杂ZnO薄膜电学特性

p-type Doping of ZnO∶N Thin Fims by Alternating The Growth Atmosphere
作者单位
1 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所, 吉林 长春130033
2 中国科学院大学, 北京 100049
3 吉林大学 物理学院, 吉林 长春130023
引用该论文

赵鹏程, 张振中, 姚斌, 李炳辉, 王双鹏, 姜明明, 赵东旭, 单崇新, 刘雷, 申德振. 通过交替生长气氛调控N掺杂ZnO薄膜电学特性[J]. 发光学报, 2014, 35(4): 399.

ZHAO Peng-cheng, ZHANG Zhen-zhong, YAO Bin, LI Bing-hui, WANG Shuang-peng, JIANG Ming-ming, ZHAO Dong-xu, SHAN Chong-xin, LIU Lei, SHEN De-zhen. p-type Doping of ZnO∶N Thin Fims by Alternating The Growth Atmosphere[J]. Chinese Journal of Luminescence, 2014, 35(4): 399.

参考文献

[1] Look D C. Recent advances in ZnO materials and devices [J]. Mater. Sci. Eng. B, 2001, 80(1-3):383-387.

[2] Ozgur U, Alivov Y I, Liu C, et al. A comprehensive review of ZnO materials and devices [J]. J. Appl. Phys., 2005, 98(4):041301-1-3.

[3] Osinsky A, Dong J W, Chernyak L, et al. MgZnO/AlGaN heterostructure light-emitting diodes [J]. Appl. Phys. Lett., 2004, 85(19):4272-4274.

[4] Pauporte T, Lincot D, Pelle F, et al. Toward laser emission of epitaxial nanorod arrays of ZnO grown by electrodeposition [J]. Appl. Phys. Lett., 2006, 89(23):233112-1-3.

[5] Look D C, Reynolds D C, Litton C W, et al. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy [J]. Appl. Phys. Lett., 2002, 81(10):1830-1832.

[6] Li X, Yan Y, Gessert T A, et al. Chemical vapor deposition-formed p-type ZnO thin films [J]. J. Vac. Sci. Technol. A, 2003, 21(4):1342-1346.

[7] Sun J C, Zhao J Z, Liang H W, et al. Realization of ultraviolet electroluminescence from ZnO homojunction with n-ZnO/p-ZnO∶As/GaAs structure [J]. Appl. Phys. Lett., 2007, 90(12):121128-1-3.

[8] Xiu F X, Yang Z, Mandalapu L J, et al. High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy [J]. Appl. Phys. Lett., 2005, 87(15):152101-1-3.

[9] Park C H, Zhang S B, Wei S H. Origin of p-type doping difficulty in ZnO: The impurity perspective [J]. Phys. Rev. B, 2002, 66(7):073202-1-3.

[10] Liu L, Xu J L, Wang D D, et al. p-type conductivity in N-doped ZnO: The role of the NZn-VO complex [J]. Phys. Rev. Lett., 2012, 108(21):215501-1-3.

[11] Reynolds J G, Reynolds C L, Mohanta A, et al. Shallow acceptor complexes in p-type ZnO [J]. Appl. Phys. Lett., 2013, 102(15):152114-1-3.

[12] Look D C, Hemsky J W, Sizelove J R. Residual native shallow donor in ZnO [J]. Phys. Rev. Lett., 1999, 82(12):2552-2555.

[13] Tsukazaki A, Onuma T, Ohtani M, et al. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO [J]. Nat. Mater., 2005, 4(1):42-46.

[14] Barnes T M, Olsonandand K, Wolden C A. On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide [J]. Appl. Phys. Lett., 2005, 86(11):112112-1-3.

[15] Zeng H B, Duan G T, Li Y, et al. Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: Defect origins and emission controls [J]. Adv. Funct. Mater., 2010, 20(4):561-572.

[16] Samanta P K, Mishra S. Wet chemical growth and optical property of ZnO nanodiscs [J]. Optik, 2013, 124(17):2871-2873.

[17] Bera A, Ghosh T, Basak D. Enhanced photoluminescence and photoconductivity of ZnO nanowires with sputtered Zn [J]. ACS Appl. Mater. Interf., 2010, 2(10):2898-2903.

[18] Mandalapu L J, Xiu F X, Yang Z, et al. Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by molecular-beam epitaxy [J]. Solid State Electron., 2007, 51(7):1014-1017.

[19] Look D C, Claflin B. P-type doping and devices based on ZnO [J]. Phys. Stat. Sol. B, 2004, 241(3):624-630.

[20] Przezdziecka E, Kaminska E, Korona K P, et al. Photoluminescence study and structural characterization of p-type ZnO doped by N and/or As acceptors [J]. Semicond. Sci. Technol., 2007, 22(2):10-14.

赵鹏程, 张振中, 姚斌, 李炳辉, 王双鹏, 姜明明, 赵东旭, 单崇新, 刘雷, 申德振. 通过交替生长气氛调控N掺杂ZnO薄膜电学特性[J]. 发光学报, 2014, 35(4): 399. ZHAO Peng-cheng, ZHANG Zhen-zhong, YAO Bin, LI Bing-hui, WANG Shuang-peng, JIANG Ming-ming, ZHAO Dong-xu, SHAN Chong-xin, LIU Lei, SHEN De-zhen. p-type Doping of ZnO∶N Thin Fims by Alternating The Growth Atmosphere[J]. Chinese Journal of Luminescence, 2014, 35(4): 399.

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