发光学报, 2014, 35 (4): 399, 网络出版: 2014-05-08
通过交替生长气氛调控N掺杂ZnO薄膜电学特性
p-type Doping of ZnO∶N Thin Fims by Alternating The Growth Atmosphere
补充材料
赵鹏程, 张振中, 姚斌, 李炳辉, 王双鹏, 姜明明, 赵东旭, 单崇新, 刘雷, 申德振. 通过交替生长气氛调控N掺杂ZnO薄膜电学特性[J]. 发光学报, 2014, 35(4): 399. ZHAO Peng-cheng, ZHANG Zhen-zhong, YAO Bin, LI Bing-hui, WANG Shuang-peng, JIANG Ming-ming, ZHAO Dong-xu, SHAN Chong-xin, LIU Lei, SHEN De-zhen. p-type Doping of ZnO∶N Thin Fims by Alternating The Growth Atmosphere[J]. Chinese Journal of Luminescence, 2014, 35(4): 399.