光子学报, 2018, 47 (5): 0523001, 网络出版: 2018-09-07
用刻蚀坑方法抑制平面型InGaAs/InP盖革模式APD的边缘击穿
Using Etch Well to Suppress Edge Breakdown of Planar-type InGaAs/InP Geiger Mode Avalanche Photodiodes
引用该论文
侯丽丽, 韩勤, 李彬, 王帅, 叶焓. 用刻蚀坑方法抑制平面型InGaAs/InP盖革模式APD的边缘击穿[J]. 光子学报, 2018, 47(5): 0523001.
HOU Li-li, HAN Qin, LI Bin, WANG Shuai, YE Han. Using Etch Well to Suppress Edge Breakdown of Planar-type InGaAs/InP Geiger Mode Avalanche Photodiodes[J]. ACTA PHOTONICA SINICA, 2018, 47(5): 0523001.
侯丽丽, 韩勤, 李彬, 王帅, 叶焓. 用刻蚀坑方法抑制平面型InGaAs/InP盖革模式APD的边缘击穿[J]. 光子学报, 2018, 47(5): 0523001. HOU Li-li, HAN Qin, LI Bin, WANG Shuai, YE Han. Using Etch Well to Suppress Edge Breakdown of Planar-type InGaAs/InP Geiger Mode Avalanche Photodiodes[J]. ACTA PHOTONICA SINICA, 2018, 47(5): 0523001.