沉积温度对氧化钇稳定氧化锆薄膜残余应力的影响
肖祁陵, 贺洪波, 邵淑英, 邵建达, 范正修. 沉积温度对氧化钇稳定氧化锆薄膜残余应力的影响[J]. 光学学报, 2008, 28(5): 1007.
Xiao Qiling, He Hongbo, Shao Shuying, Shao Jianda, Fan Zhengxiu. Influence of Deposition Temperature on Residual Stress of Yttria-Stabilized Zirconia Thin Films[J]. Acta Optica Sinica, 2008, 28(5): 1007.
[1] . Lnhig, Ch Bnchal, D. Cnggi et al.. Epitaxial growth of monoclinic and cubic ZrO2 on Si(100) without prior removal of the native SiO2[J]. Thin Solid Films, 1992, 217: 125-128.
[2] . Guinebretiere, B. Soulestin, A. Danger. XRD and TEM study of heteroepotaxial growth of zirconia on magnesia single crystal[J]. Thin Solid Films, 1998, 319: 197-197.
[3] S. Ben Amor, B. Rogier, G. Baud et al.. Characterization of zirconia films deposited by r.f. magnetron sputtering[J]. Materials Science and Engineering, 1998, B57: 28~39
[6] . Boulouz, F. Tcheliebou, A. Boyer. Electrical and optical properties of magnetron-sputtered Y2O3 stabilized ZrO2 thin films[J]. J. European Ceramic Society, 1997, 17: 1741-1748.
[7] . T. Pawlewicz, D. D. Hays. Microstructure control for sputter-deposited ZrO2, ZrO2·CaO and ZrO2·Y2O3[J]. Thin Solid Films, 1982, 94: 31-45.
[8] . Tcheliebou, M. Boulouz, A. Boyer. Electrical behaviour of thin ZrO2 films containing some ceramic oxides[J]. J. Materials Science and Engineering, 1996, 38: 90-95.
[9] . Boulouz, L. Martin, A. Boulouz et al.. Effect of the dopant content on the physical properties of Y2O3-ZrO2 and CaO-ZrO2 thin films produced by evaporation and sputtering techniques[J]. Materials Science and Engineering, 1999, 67: 122-131.
[10] . . Preparation of YSZ films by EPD and its application in SOFCs[J]. J. Alloys and Compounds, 2006, 424: 299-303.
[11] . . Y2O3 stabilized ZrO2 thin films deposited by electron beam evaporation: structural, morphological characterization and laser induced damage threshold[J]. Applied Surface Science, 2006, 253: 1561-1566.
[13] Shao Shuying, Fan Zhengxiu, Fan Ruiying et al.. Influence of deposition temperature on the properties of ZrO2 films prepared by electron beam evaporation[J]. Chin. J. Lasers, 2004, 31(6): 700~704
邵淑英,范正修,范瑞瑛 等. 沉积温度对电子束蒸发沉积ZrO2薄膜性质的影响[J]. 中国激光, 2004, 31(6): 700~704
[14] . Tamulevicius. Stress and strain in the vacuum deposited thin films[J]. Vacuum, 1998, 51(2): 127-138.
[15] Wu Shigang. Analysis of Impurities and Reducing of Defects in Optical Thin Film[D]. Shanghai: Shanghai Institute of Optics and Fine Mechanics, 2006. 95~98
吴师岗. 光学薄膜中的杂质分析和缺陷抑制[D]. 上海: 上海光学精密机械研究所, 2006. 95~98
[16] Li Hengde, Xiao Jimei. Surface and Interface of Materials[M]. Beijing: Tsinghua University Press, 1990. 146~149
李恒德,肖纪美. 材料表面与界面[M]. 北京: 清华大学出版社, 1990. 146~149
[18] Freund L B, Suresh S. Thin Film Materials——Stress, Defect Formation and Surface Evolution[M]. Cambridge: the United Kingdom at the University Press, 2003. 60~69
[19] . . Stoichiometry in GaMnAs by double crystal diffraction measurements[J]. Chinese Science Bulletin, 2001, 46(24): 2035-2037.
肖祁陵, 贺洪波, 邵淑英, 邵建达, 范正修. 沉积温度对氧化钇稳定氧化锆薄膜残余应力的影响[J]. 光学学报, 2008, 28(5): 1007. Xiao Qiling, He Hongbo, Shao Shuying, Shao Jianda, Fan Zhengxiu. Influence of Deposition Temperature on Residual Stress of Yttria-Stabilized Zirconia Thin Films[J]. Acta Optica Sinica, 2008, 28(5): 1007.