液晶与显示, 2009, 24 (1): 52, 网络出版: 2010-01-22
掺杂及工艺条件对室温制备ZnO:Al性能的影响
Influence of Doping Content and Sputtering Parameter on Resistivity and Transmittancce of ZnO:Al Thin Films Prepared by DC Magnetron Sputtering at Room Temperature
引用该论文
任明放, 王华, 许积文, 杨玲. 掺杂及工艺条件对室温制备ZnO:Al性能的影响[J]. 液晶与显示, 2009, 24(1): 52.
REN Ming-fang, WANG Hua, XU Ji-wen, YANG Ling. Influence of Doping Content and Sputtering Parameter on Resistivity and Transmittancce of ZnO:Al Thin Films Prepared by DC Magnetron Sputtering at Room Temperature[J]. Chinese Journal of Liquid Crystals and Displays, 2009, 24(1): 52.
任明放, 王华, 许积文, 杨玲. 掺杂及工艺条件对室温制备ZnO:Al性能的影响[J]. 液晶与显示, 2009, 24(1): 52. REN Ming-fang, WANG Hua, XU Ji-wen, YANG Ling. Influence of Doping Content and Sputtering Parameter on Resistivity and Transmittancce of ZnO:Al Thin Films Prepared by DC Magnetron Sputtering at Room Temperature[J]. Chinese Journal of Liquid Crystals and Displays, 2009, 24(1): 52.
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