控制器组件γ瞬时辐射效应研究

王义元; 沈宗月; 赵志明; 韩冬梅; 柳征勇

doi:doi:10.11884/hplpb201628.044001

强激光与粒子束, 2016, 28 (4): 044001, 网络出版: 2016-04-01

控制器组件γ瞬时辐射效应研究

Transient ionizing radiation effects of electrocircuit system

论文大纲

王义元 ^*沈宗月赵志明韩冬梅柳征勇

作者单位

上海宇航系统工程研究所, 上海 201109

电子系统瞬时辐照效应 γ剂量率 electronic circuits transient radiation effect γ dose rate

摘要

瞬时电离辐射在电子器件内部形成的光电流可引起器件输出扰动，导致电路中部分器件受电源、输入信号及自身产生光电流扰动的多重影响，而单独对器件进行试验无法反映γ瞬时辐射输出扰动在电子组件系统中的传递影响。为此对由DC/DC、稳压器、单片机CPU，FPGA等组成的控制器组件在2.8×105~1.7×107 Gy(Si)/s的范围内开展了γ瞬时辐射效应的试验研究。试验中对组件功能和器件参数的测试结果表明，在较小的瞬时剂量率下，部分器件输出受到影响，但组件功能正常; 较大剂量率时，所有器件均受影响，且组件功能中断。同时观测到瞬时辐射形成的扰动信号在器件间传输现象。

Abstract

When the devices are irradiated with the system at the transient γ dose rate, many of them will work at the state that all of the input signal, power supply and the photocurrent are out of the designed state. This transient effects can not be found by irradiating the device only. So transient radiation effects with γ -ray on an electronics system, composed of DC/DC, CPU, FPGA, et al, were investigated. The gamma pulse width was 20 ns and the dose rate was in the range of 2.8×105 to 1.7×107Gy (Si)/s in the experimental study. And the function of the system and many parameters of the main devices were tested. The result of experiments showed that some of the test devices were disrupted by low level of transient γ radiation, but the system work was not disturbed. While the dose rates increased, all of the devices were disrupted and the system function failed. The signal originating from the transient ionizing radiation transferring from the input to the output of the device was observed.

参考文献

[1] Alexander D R. Transient ionizing radiation effects in devices and circuit[J]. IEEE Trans Nucl Sci, 2003, 50(3): 565-582.

[2] 杜川华, 詹峻岭, 徐曦. 反熔丝FPGA延时电路γ瞬时辐射效应[J]. 强激光与粒子束, 2006, 18(2): 321-324. (Du Chuanhua, Zhan Junling, Xu Xi. γ transient radiation effects of antifuse-based FPGA delay circuit. High Power Laser and Particle Beams, 2006, 18(2): 321-324)

[3] 杜川华, 詹峻岭, 许献国, 等. 反熔丝FPGA电路瞬时电离辐射效应及加固设计[J]. 核电子学与探测技术, 2012, 32(11): 1247-1250. (Du Chuanhua，Zhan Junling, Xu Xianguo, et al. Transient ionizing radiation effects and hardened design of antifuse-based FPGA circuit. Nuclear Electronics ＆ Detection Technology, 2012, 32(11): 1247-1250)

[4] 赵洪超, 朱小锋, 杜川华. 反熔丝FPGA 器件γ 剂量率辐射效应规律探讨[J]. 信息与电子工程, 2010, 8(1): 84-95. (Zhao Hongchao, Zhu Xiaofeng, Du Chuanhua. Study of radiation effects by transient γ-rays for anti-fuse FPGA. Information and Electronic Engineering, 2010, 8(1): 84-95)

[5] 周开明, 谢泽元, 杨有莉. 瞬时辐射对80C31单片机性能的影响[J]. 核电子学与探测技术, 2006, 26(6): 981-984. (Zhou Kaiming, Xie Zeyuan, Yang Youli. Influence of transient radiation for the behaviour of the 80C31single-chip microcontroller. Nuclear Electronics & Detection Technology, 2006, 26(6): 981-984)

[6] 金晓明, 范如玉, 陈伟, 等. CMOS工艺微控制器瞬时电离辐射效应实验研究[J]. 原子能科学技术, 2010, 44(12): 1487-1492. (Jin Xiaoming, Fan Ruyu, Chen Wei, et al. Experimental research on transient ionizing radiation effects of CMOS microcontroller. Atomic Energy Science and Technology, 2010, 44(12): 1487-1492)

[7] 马强, 范如玉, 陈伟, 等. 双极型运算放大器瞬时电离辐射效应实验研究[J]. 原子能科学技术, 2013, 47(6): 1064-1069. (Ma Qiang, Fan Ruyu, Chen Wei, et al. Experimental study of transient ionizing radiation effects in bipolar operational amplifier. Atomic Energy Science and Technology, 2013, 47(6): 1064-1069)

[8] 朱小锋, 赵洪超, 周开明. γ脉宽对电子器件瞬时辐照效应的影响[J]. 强激光与粒子束, 2009, 21(10): 1539-1541. (Zhu Xiaofeng, Zhao Hongchao, Zhou Kaiming. Pulse-width dependent radiation effects on electronic components. High Power Laser and Particle Beams, 2009, 21(10): 1539-1541)

[9] 王桂珍, 林东生, 齐超, 等. 0.18 μm CMOS电路瞬时剂量率效应实验研究[J]. 原子能科学技术, 2014, 48(11): 2165-2169. (Wang Guizhen, Lin Dongsheng, Qi Chao, et al. Experimental research of transient dose rate effect on CMOS circuit with feature size of 0.18 μm. Atomic Energy Science and Technology, 2014, 48(11): 2165-2169)

[10] Oh S C, Lee N H, Lee H H. The study of the transient radiation effects on electronic devices caused by pulsed high energy gamma-ray[C]//12th International Conference on Control, Automation and Systems (ICCAS). 2012: 1233-1236.

[11] MSK5131器件手册[EB/OL]. http: //www.mskennedy.com(MSK5131 manual. http: //www.mskennedy.com)

王义元, 沈宗月, 赵志明, 韩冬梅, 柳征勇. 控制器组件γ瞬时辐射效应研究[J]. 强激光与粒子束, 2016, 28(4): 044001. Wang Yiyuan, Shen Zongyue, Zhao Zhiming, Han Dongmei, Liu Zhengyong. Transient ionizing radiation effects of electrocircuit system[J]. High Power Laser and Particle Beams, 2016, 28(4): 044001.

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